Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device

2012 ◽  
Vol 33 (3) ◽  
pp. 342-344 ◽  
Author(s):  
Yong-En Syu ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Geng-Wei Chang ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Electric Field ◽  
Conduction Mechanism ◽  
Resistance Switching ◽  
Switching Device

Conduction mechanism of resistance switching in fully transparent MgO-based memory devices

2013 ◽  
Vol 114 (13) ◽  
pp. 134301 ◽  
Author(s):  
Ting Zhang ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Weifeng Zhang ◽  
Zhiguo Liu
Keyword(s):  
Conduction Mechanism ◽  
Resistance Switching ◽  
Memory Devices ◽  
Mechanism Of Resistance

Spatial Redistribution of Oxygen Ions in Oxide Resistance Switching Device after Forming Process

2010 ◽  
Vol 49 (6) ◽  
pp. 060215 ◽  
Author(s):  
Takeshi Yajima ◽  
Kohei Fujiwara ◽  
Aiko Nakao ◽  
Tomohiro Kobayashi ◽  
Toshiyuki Tanaka ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Forming Process ◽  
Switching Device ◽  
Oxygen Ions ◽  
Spatial Redistribution

Control of Dielectric Fluid Flow Distribution in Micro-Tubes With EHD Conduction Pumping: Numerical Study

2011 ◽  
Author(s):  
Miad Yazdani ◽  
Jamal Seyed-Yagoobi
Keyword(s):  
Fluid Flow ◽  
Electric Field ◽  
Conduction Mechanism ◽  
Numerical Study ◽  
Fluid Motion ◽  
Flow Distribution ◽  
Operating Conditions ◽  
Dielectric Fluid ◽  
Total Flow ◽  
Flow Through

The control of fluid flow distribution in micro-scale tubes is numerically investigated. The flow distribution control is achieved via electric conduction mechanism. In electrohydrodynamic (EHD) conduction pumping, when an electric field is applied to a fluid, dissociation and recombination of electrolytic species produces heterocharge layers in the vicinity of electrodes. Attraction between electrodes and heterocharge layers induces a fluid motion and a net flow is generated if the electrodes are asymmetric. The numerical domain comprises a 2-D manifold attached to two bifurcated tubes with one of the tubes equipped with a bank of uniquely designed EHD-conduction electrodes. In the absence of electric field, the total flow supplied at the manifold’s inlet is equally distributed among the tubes. The EHD-conduction, however, operates as a mechanism to manipulate the flow distribution to allow the flow through one branch surpasses the counterpart of the other branch. Its performance is evaluated under various operating conditions.

INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OF Pt/Bi0.975La0.025Fe0.975Ni0.025O3/Pt CAPACITOR MEASURED AT DIFFERENT TEMPERATURES

2014 ◽  
Vol 21 (02) ◽  
pp. 1450029 ◽  
Author(s):  
XIU HONG DAI ◽  
HONG DONG ZHAO ◽  
LEI ZHANG ◽  
HUI JUAN ZHU ◽  
XIAO HONG LI ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Applied Electric Field ◽  
Conduction Mechanism ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ohmic Behavior ◽  
Different Temperatures ◽  
Limited Conduction ◽  
Current Behavior

Polycrystalline Bi 0.975 La 0.025 Fe 0.975 Ni 0.025 O 3 (BLFNO) film is fabricated on Pt / Ti / SiO 2/ Si (111) substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt / BLFNO / Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt / BLFNO / Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt / BLFNO / Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices

2011 ◽  
Vol 130-134 ◽  
pp. 1-4
Author(s):  
Qi Wang ◽  
Kai Liang Zhang ◽  
Fang Wang ◽  
Kai Song ◽  
Zhi Xiang Hu
Keyword(s):  
Electric Field ◽  
Resistance Switching ◽  
Insulator Transition ◽  
Resistive State ◽  
Emission Model ◽  
Device Structure ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Magnetic Sputtering

A sandwich device structure of MIM (metal/insulator/metal) is designed and its metal-insulator transition induced by an external electric field is investigated. VOxfilms were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VOx/Cu/Ti/SiO2/Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with-0.4V/0.3V operation voltage (SET/RESET), while the devices of Pt/VOx/V/Cu/Ti/SiO2/Si, Pt/VOx/Al/Ti/SiO2/Si and Pt/VOx/Pt/Ti/SiO2/Si didn’t show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VOx/Cu/Ti/SiO2/Si device.

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