scholarly journals Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

RSC Advances ◽  
2019 ◽  
Vol 9 (17) ◽  
pp. 9392-9400 ◽  
Author(s):  
Jiahe Huang ◽  
Xiaofeng Zhao ◽  
Hongyan Zhang ◽  
Ju Bai ◽  
Shuhong Wang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Suzuki Reaction ◽  
Resistance Switching ◽  
Memory Devices

In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized.

Adaptive Interference Mitigation for Multilevel Flash Memory Devices

2011 ◽  
Vol E94-A (11) ◽  
pp. 2453-2457
Author(s):  
Myeongwoon JEON ◽  
Kyungchul KIM ◽  
Sungkyu CHUNG ◽  
Seungjae CHUNG ◽  
Beomju SHIN ◽  
...  
Keyword(s):  
Flash Memory ◽  
Interference Mitigation ◽  
Memory Devices

Characterization of tunnel-oxide degradation due to plasma field oxide recess in flash memory devices

2012 ◽  
Vol 520 (15) ◽  
pp. 5007-5010 ◽  
Author(s):  
Jeungyun Lee ◽  
Dong-Kwon Kim ◽  
Gyung-Jin Min ◽  
Ilsub Chung
Keyword(s):  
Flash Memory ◽  
Memory Devices ◽  
Oxide Degradation ◽  
Field Oxide

Garbage Collection Algorithms for NAND Flash Memory Devices -- An Overview

2013 ◽  
Author(s):  
Raja Subramani ◽  
Haritima Swapnil ◽  
Niharika Thakur ◽  
Bharath Radhakrishnan ◽  
Krishnamurthy Puttaiah
Keyword(s):  
Flash Memory ◽  
Garbage Collection ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices

1996 ◽  
Vol 35 (Part 1, No. 6A) ◽  
pp. 3369-3373 ◽  
Author(s):  
Ping-Wei Wang ◽  
Tzu-Kun Ku ◽  
Huan-Ping Su ◽  
Gary Hong ◽  
Huang-Chung Cheng
Keyword(s):  
Flash Memory ◽  
Silicon Films ◽  
Emission Characteristics ◽  
Memory Devices

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

Conduction mechanism of resistance switching in fully transparent MgO-based memory devices

2013 ◽  
Vol 114 (13) ◽  
pp. 134301 ◽  
Author(s):  
Ting Zhang ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Weifeng Zhang ◽  
Zhiguo Liu
Keyword(s):  
Conduction Mechanism ◽  
Resistance Switching ◽  
Memory Devices ◽  
Mechanism Of Resistance
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