Resistance switching memory devices constructed on plastic with solution-processed titanium oxide

2009 ◽  
Vol 19 (14) ◽  
pp. 2082 ◽  
Author(s):  
Junggwon Yun ◽  
Kyoungah Cho ◽  
Byoungjun Park ◽  
Bae Ho Park ◽  
Sangsig Kim
Keyword(s):  
Titanium Oxide ◽  
Resistance Switching ◽  
Memory Devices ◽  
Solution Processed ◽  
Switching Memory

Effect of functional groups on microporous polymer based resistance switching memory devices

2020 ◽  
Vol 56 (47) ◽  
pp. 6356-6359
Author(s):  
Yaru Song ◽  
Jie Liu ◽  
Wanhui Li ◽  
Lei Liu ◽  
Ling Yang ◽  
...  
Keyword(s):  
Functional Groups ◽  
Resistance Switching ◽  
Memory Devices ◽  
Large Area ◽  
Air Interface ◽  
Microporous Polymer ◽  
Switching Memory

Here, two large-area microporous polymer (MP) films with different substituents were synthesized at the solution/air interface.

Trap exploration of ZnO-based resistance switching memory devices

2013 ◽  
Author(s):  
Fu-Chien Chiu ◽  
Wen-Yuan Chang ◽  
Peng-Wei Li ◽  
Chih-Chi Chen ◽  
Wen-Ping Chiang
Keyword(s):  
Resistance Switching ◽  
Memory Devices ◽  
Switching Memory

scholarly journals High-Performance Resistance Switching Memory Devices Using Spin-On Silicon Oxide

2018 ◽  
Vol 17 (5) ◽  
pp. 884-888 ◽  
Author(s):  
Wing H. Ng ◽  
Adnan Mehonic ◽  
Mark Buckwell ◽  
Luca Montesi ◽  
Anthony J. Kenyon
Keyword(s):  
High Performance ◽  
Silicon Oxide ◽  
Resistance Switching ◽  
Memory Devices ◽  
Switching Memory

scholarly journals Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21917-21921 ◽  
Author(s):  
Masoud Akbari ◽  
Jang-Sik Lee
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Ta Doping ◽  
Switching Memory

In this study, we investigated the effect of Ni and Ta doping on resistive switching behaviors of solution-processed HfOX-based resistive switching memory (RRAM) devices.

scholarly journals Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

2010 ◽  
Vol 107 (2) ◽  
pp. 024517 ◽  
Author(s):  
R. Soni ◽  
P. Meuffels ◽  
A. Petraru ◽  
M. Weides ◽  
C. Kügeler ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Memory Devices ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Switching Memory

scholarly journals Memory Devices: Solution‐Processed Stretchable Ag 2 S Semiconductor Thin Films for Wearable Self‐Powered Nonvolatile Memory (Adv. Mater. 23/2021)

2021 ◽  
Vol 33 (23) ◽  
pp. 2170181
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
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