Resistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices

2014 ◽  
Vol 32 (6) ◽  
pp. 061505 ◽  
Author(s):  
Hsiao-Ching Yang ◽  
Sea-Fue Wang ◽  
Jinn P. Chu
Keyword(s):  
Nonvolatile Memory ◽  
Resistance Switching ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

scholarly journals A mechanism for unipolar resistance switching in oxide nonvolatile memory devices

2007 ◽  
Vol 91 (25) ◽  
pp. 252101 ◽  
Author(s):  
M. J. Sánchez ◽  
M. J. Rozenberg ◽  
I. H. Inoue
Keyword(s):  
Nonvolatile Memory ◽  
Resistance Switching ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

scholarly journals Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Fu-Chien Chiu
Keyword(s):  
Pulse Width ◽  
Nonvolatile Memory ◽  
High Resistance State ◽  
Resistance Switching ◽  
Memory Devices ◽  
Reset Voltage ◽  
Conducting Path ◽  
Nonvolatile Memory Devices ◽  
Resistance State ◽  
Switching Characteristics

Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices

2011 ◽  
Vol 11 (2) ◽  
pp. e62-e65 ◽  
Author(s):  
Kuyyadi P. Biju ◽  
Xinjun Liu ◽  
Seonghyun Kim ◽  
Manzar Siddik ◽  
Jungho Shin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Resistance Switching ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Bipolar Resistance Switching

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films

2007 ◽  
Vol 91 (7) ◽  
pp. 073511 ◽  
Author(s):  
Liang Chen ◽  
Yidong Xia ◽  
Xuefei Liang ◽  
Kuibo Yin ◽  
Jiang Yin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices
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