Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors

2007 ◽  
Vol 91 (17) ◽  
pp. 172909 ◽  
Author(s):  
F. El Kamel ◽  
P. Gonon ◽  
C. Vallée
Keyword(s):  
Experimental Evidence ◽  
Oxygen Vacancies ◽  
Metal Insulator ◽  
High K ◽  
Metal Insulator Metal

The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors

2008 ◽  
Vol 104 (5) ◽  
pp. 054510 ◽  
Author(s):  
Bing Miao ◽  
Rajat Mahapatra ◽  
Nick Wright ◽  
Alton Horsfall
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Carbon Contamination ◽  
High K ◽  
Metal Insulator Metal

Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric

2013 ◽  
Vol 102 (17) ◽  
pp. 173501 ◽  
Author(s):  
Alexander C. Kozen ◽  
Marshall A. Schroeder ◽  
Kevin D. Osborn ◽  
C. J. Lobb ◽  
Gary W. Rubloff
Keyword(s):  
Atomic Layer ◽  
Electrical Performance ◽  
Metal Insulator ◽  
Fabricated Metal ◽  
Metal Insulator Metal

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

2014 ◽  
Vol 61 (8) ◽  
pp. 2619-2627 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
Sung-Kyu Kwon ◽  
Kwang-Seok Jeong ◽  
Sung-Kwen Oh ◽  
Sun-Ho Oh ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Oxygen Vacancies ◽  
Metal Insulator ◽  
Reliability Characteristics ◽  
Metal Insulator Metal

scholarly journals Revealing the role of oxygen vacancies on the phase transition of VO2 film from the optical-constant measurements

RSC Advances ◽  
2018 ◽  
Vol 8 (34) ◽  
pp. 19151-19156 ◽  
Author(s):  
Lele Fan ◽  
Xiangqi Wang ◽  
Feng Wang ◽  
Qinfang Zhang ◽  
Lei Zhu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Optical Constant ◽  
Optical Conductivity ◽  
Oxygen Vacancies ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Optical conductivity spectroscopy was performed to reveal the role of oxygen vacancies during VO2 metal–insulator transition.

Electro-forming of vacancy-doped metal-SrTiO3-metal structures

2011 ◽  
Vol 1337 ◽  
Author(s):  
Florian Hanzig ◽  
Juliane Seibt ◽  
Hartmut Stoecker ◽  
Barbara Abendroth ◽  
Dirk C. Meyer
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Physical Vapor Deposition ◽  
Oxygen Vacancies ◽  
Vacuum Annealing ◽  
Metal Insulator ◽  
Metal Structures ◽  
Wide Range ◽  
Metal Insulator Metal

ABSTRACTResistance switching in metal – insulator - metal (MIM) structures with transition metal oxides as the insulator material is a promising concept for upcoming non-volatile memories. The electronic properties of transition metal oxides can be tailored in a wide range by doping and external fields. In this study SrTiO3 single crystals are subjected to high temperature vacuum annealing. The vacuum annealing introduces oxygen vacancies, which act as donor centers. MIM stacks are produced by physical vapor deposition of Au and Ti contacts on the front and rear face of the SrTiO3 crystal. The time dependent forming of the MIM stacks under an external voltage is investigated for crystals with varying bulk conductivities. For continued formation, the resistivity increases up to failure of the system where no current can be measured anymore and switching becomes impossible.

Sign in / Sign up

Export Citation Format

Share Document