Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

Pengfei Guo; Genquan Han; Xiao Gong; Bin Liu; Yue Yang; Wei Wang; Qian Zhou; Jisheng Pan; Zheng Zhang; Eng Soon Tok; Yee-Chia Yeo

doi:10.1063/1.4816695

Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

Journal of Applied Physics ◽

10.1063/1.4816695 ◽

2013 ◽

Vol 114 (4) ◽

pp. 044510 ◽

Cited By ~ 40

Author(s):

Pengfei Guo ◽

Genquan Han ◽

Xiao Gong ◽

Bin Liu ◽

Yue Yang ◽

...

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Surface Passivation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.3074298 ◽

2009 ◽

Vol 12 (4) ◽

pp. H131 ◽

Cited By ~ 5

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Passivation ◽

Silicon Interface

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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In-Situ Surface Passivation and Metal-Gate/High-κDielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vtsa.2008.4530782 ◽

2008 ◽

Author(s):

Hock-Chun Chin ◽

Ming Zhu ◽

Sung-Jin Whang ◽

Chih-Hang Tung ◽

Ganesh S. Samudra ◽

...

Keyword(s):

Gallium Arsenide ◽

Metal Oxide ◽

Field Effect ◽

Surface Passivation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate

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The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2015.9834 ◽

2015 ◽

Vol 15 (4) ◽

pp. 2673-2679

Author(s):

K. C. Lin ◽

M. J. Twu ◽

R. H. Deng ◽

C. H. Liu

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Etch Stop ◽

Etch Stop Layer

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High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2990645 ◽

2008 ◽

Vol 93 (13) ◽

pp. 132902 ◽

Cited By ~ 9

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Feng Zhu ◽

M. Zhang ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3025909 ◽

2009 ◽

Vol 27 (1) ◽

pp. 214 ◽

Cited By ~ 11

Author(s):

Fei Gao ◽

S. J. Lee ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Surface Passivation ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor

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Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC10 ◽

Cited By ~ 2

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.3028025 ◽

2008 ◽

Vol 93 (19) ◽

pp. 192115 ◽

Cited By ~ 5

Author(s):

H. J. Na ◽

J. C. Lee ◽

D. Heh ◽

P. Sivasubramani ◽

P. D. Kirsch ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Surface Passivation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Surface

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HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2961119 ◽

2008 ◽

Vol 93 (10) ◽

pp. 102906 ◽

Cited By ~ 17

Author(s):

Hyoung-Sub Kim ◽

I. Ok ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å

Applied Physics Letters ◽

10.1063/1.3143629 ◽

2009 ◽

Vol 94 (21) ◽

pp. 213505 ◽

Cited By ~ 27

Author(s):

Yen-Ting Chen ◽

Han Zhao ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Jack C. Lee

Keyword(s):

Indium Phosphide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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