Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å

2009 ◽  
Vol 94 (21) ◽  
pp. 213505 ◽  
Author(s):  
Yen-Ting Chen ◽  
Han Zhao ◽  
Jung Hwan Yum ◽  
Yanzhen Wang ◽  
Jack C. Lee
Keyword(s):  
Indium Phosphide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness

scholarly journals Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications

Electronics ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 29
Author(s):  
Tae-Woo Kim
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Scaling Effects ◽  
Gate Stack ◽  
Low Power Logic

We created tri-gate sub-100 nm In0.53Ga0.47As metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with a bi-layer Al2O3/HfO2 gate stack and investigated the scaling effects on equivalent-oxide-thickness (EOT) and fin-width (Wfin) at gate lengths of sub-100 nm. For Lg = 60 nm In0.53Ga0.47As tri-gate MOSFETs, EOT and Wfin scaling were effective for improving electrostatic immunities such as subthreshold swing and drain-induced-barrier-lowering. Reliability characterization for In0.53Ga0.47As Tri-Gate MOSFETs using constant-voltage-stress (CVS) at 300K demonstrates slightly worse VT degradation compared to planar InGaAs MOSFET with the same gate stack and EOT. This is due to the effects of both of the etched fin’s sidewall interfaces.

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