Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

Fei Gao; S. J. Lee; D. L. Kwong

doi:10.1116/1.3025909

Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3025909 ◽

2009 ◽

Vol 27 (1) ◽

pp. 214 ◽

Cited By ~ 11

Author(s):

Fei Gao ◽

S. J. Lee ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Surface Passivation ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor

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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Cited By ~ 13

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.3462303 ◽

2010 ◽

Vol 97 (1) ◽

pp. 012106 ◽

Cited By ~ 30

Author(s):

J. J. Gu ◽

Y. Q. Liu ◽

M. Xu ◽

G. K. Celler ◽

R. G. Gordon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Thermally Grown

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Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2396914 ◽

2006 ◽

Vol 89 (22) ◽

pp. 222904 ◽

Cited By ~ 24

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Manhong Zhang ◽

T. Lee ◽

F. Zhu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor

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Atomic-Layer-Deposition HfO2-Based InP n-Channel Metal-Oxide-Semiconductor Field Effect Transistor Using Different Thicknesses of Al2O3 as Interfacial Passivation Layer

ECS Transactions ◽

10.1149/1.3481638 ◽

2019 ◽

Vol 33 (3) ◽

pp. 487-493 ◽

Cited By ~ 5

Author(s):

Yanzhen Wang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2931708 ◽

2008 ◽

Vol 92 (20) ◽

pp. 203505 ◽

Cited By ~ 27

Author(s):

D. Shahrjerdi ◽

T. Akyol ◽

M. Ramon ◽

D. I. Garcia-Gutierrez ◽

E. Tutuc ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor ◽

Al2o3 Gate Dielectric

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Enhancement‐Mode β ‐Ga 2 O 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201900586 ◽

2019 ◽

Vol 14 (3) ◽

pp. 1900586 ◽

Cited By ~ 2

Author(s):

Yuanjie Lv ◽

Xingye Zhou ◽

Shibing Long ◽

Yuangang Wang ◽

Xubo Song ◽

...

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxygen Annealing ◽

Enhancement Mode ◽

High Breakdown Voltage ◽

Effect Transistor

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Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor applications

Applied Physics Letters ◽

10.1063/1.2905259 ◽

2008 ◽

Vol 92 (12) ◽

pp. 123513 ◽

Cited By ~ 2

Author(s):

Ming Zhu ◽

Hock-Chun Chin ◽

Ganesh S. Samudra ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Enhancement Mode ◽

Effect Transistor ◽

Gate Work Function

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Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layer

Applied Physics Letters ◽

10.1063/1.3279140 ◽

2010 ◽

Vol 96 (2) ◽

pp. 022905 ◽

Cited By ~ 8

Author(s):

Chih-Ren Hsieh ◽

Yung-Yu Chen ◽

Jen-Chung Lou

Keyword(s):

Metal Oxide ◽

Silicate Glass ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Improved Performance

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Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

Applied Physics Letters ◽

10.1063/1.2817742 ◽

2007 ◽

Vol 91 (22) ◽

pp. 223502 ◽

Cited By ~ 25

Author(s):

J. F. Zheng ◽

W. Tsai ◽

T. D. Lin ◽

Y. J. Lee ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode ◽

Effect Transistor

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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