High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Hyoung-Sub Kim; Injo Ok; Feng Zhu; M. Zhang; S. Park; J. Yum; H. Zhao; Prashant Majhi; Domingo I. Garcia-Gutierrez; Niti Goel; W. Tsai; C. K. Gaspe; M. B. Santos; Jack C. Lee

doi:10.1063/1.2990645

High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2990645 ◽

2008 ◽

Vol 93 (13) ◽

pp. 132902 ◽

Cited By ~ 9

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Feng Zhu ◽

M. Zhang ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3350893 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102101 ◽

Cited By ~ 61

Author(s):

Han Zhao ◽

Yen-Ting Chen ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Barrier Layers

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High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2High-kDielectric and Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c055 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C055 ◽

Cited By ~ 3

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Chang Yong Kang ◽

Raj Jammy ◽

Raymond Joe ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate

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Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Applied Physics Letters ◽

10.1063/1.4813829 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033502 ◽

Cited By ~ 21

Author(s):

Yuya Minoura ◽

Atsushi Kasuya ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Interfaces ◽

And Control

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Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.3074298 ◽

2009 ◽

Vol 12 (4) ◽

pp. H131 ◽

Cited By ~ 5

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Passivation ◽

Silicon Interface

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Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

Applied Physics Letters ◽

10.1063/1.3604417 ◽

2011 ◽

Vol 99 (2) ◽

pp. 022106 ◽

Cited By ~ 7

Author(s):

Y.-T. Chen ◽

H.-S. Lan ◽

W. Hsu ◽

Y.-C. Fu ◽

J.-Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strain Response

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High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy

Applied Physics Letters ◽

10.1063/1.4766917 ◽

2012 ◽

Vol 101 (20) ◽

pp. 202105 ◽

Cited By ~ 11

Author(s):

Yuichiro Suzuki ◽

Shimpei Ogiwara ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Liquid Phase Epitaxy ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2961119 ◽

2008 ◽

Vol 93 (10) ◽

pp. 102906 ◽

Cited By ~ 17

Author(s):

Hyoung-Sub Kim ◽

I. Ok ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1819976 ◽

2005 ◽

Vol 97 (1) ◽

pp. 011101 ◽

Cited By ~ 713

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald ◽

Mayank T. Bulsara ◽

Matthew T. Currie ◽

Anthony Lochtefeld

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

Applied Physics Express ◽

10.1143/apex.5.076501 ◽

2012 ◽

Vol 5 (7) ◽

pp. 076501 ◽

Cited By ~ 22

Author(s):

Masafumi Yokoyama ◽

Sanghyeon Kim ◽

Rui Zhang ◽

Noriyuki Taoka ◽

Yuji Urabe ◽

...

Keyword(s):

Metal Oxide ◽

Wafer Bonding ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Source ◽

Channel Integration ◽

Direct Wafer Bonding

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Vertical p-type high-mobility heterojunction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1375004 ◽

2001 ◽

Vol 78 (21) ◽

pp. 3334-3336 ◽

Cited By ~ 3

Author(s):

Xiangdong Chen ◽

Qiqing Ouyang ◽

Sankaran Kartik Jayanarayanan ◽

Freek E. Prins ◽

Sanjay Banerjee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type

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