Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

2008 ◽  
Vol 93 (19) ◽  
pp. 192115 ◽  
Author(s):  
H. J. Na ◽  
J. C. Lee ◽  
D. Heh ◽  
P. Sivasubramani ◽  
P. D. Kirsch ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
High Performance ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effective Surface

scholarly journals A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 223 ◽  
Author(s):  
Yannan Zhang ◽  
Ke Han ◽  
and Jiawei Li
Keyword(s):  
Metal Oxide ◽  
Low Power ◽  
Energy Efficient ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Future Generation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ultra Low Power

Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core–Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.

High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

2010 ◽  
Vol 3 (4) ◽  
pp. 044001 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Kyosuke Tsuge ◽  
Syunsuke Sato ◽  
Tetsuya Tsuno ◽  
Yoshikatsu Jingu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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