Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors

2013 ◽  
Vol 113 (17) ◽  
pp. 174503 ◽  
Author(s):  
Kai Zhang ◽  
JunShuai Xue ◽  
MengYi Cao ◽  
LiYuan Yang ◽  
YongHe Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Channel

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

2017 ◽  
Vol 17 (12) ◽  
pp. 1601-1608 ◽  
Author(s):  
S. Latrach ◽  
E. Frayssinet ◽  
N. Defrance ◽  
S. Chenot ◽  
Y. Cordier ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Trap states in AlGaN channel high-electron-mobility transistors

2013 ◽  
Vol 103 (21) ◽  
pp. 212106 ◽  
Author(s):  
ShengLei Zhao ◽  
Kai Zhang ◽  
Wei Ha ◽  
YongHe Chen ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

The plasmonic resonant absorption in GaN double-channel high electron mobility transistors

2011 ◽  
Vol 99 (6) ◽  
pp. 063502 ◽  
Author(s):  
Lin Wang ◽  
Xiao-Shuang Chen ◽  
Wei-Da Hu ◽  
Jun Wang ◽  
Jian Wang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Resonant Absorption ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Channel

scholarly journals Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 42
Author(s):  
Hsin-Ying Lee ◽  
Ying-Hao Ju ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Planar Channel ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Source Voltage ◽  
Double Channel

In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

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