Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

2014 ◽  
Vol 104 (9) ◽  
pp. 093504 ◽  
Author(s):  
Xiao-Hua Ma ◽  
Wei-Wei Chen ◽  
Bin Hou ◽  
Kai Zhang ◽  
Jie-Jie Zhu ◽  
...  
2013 ◽  
Vol 113 (17) ◽  
pp. 174503 ◽  
Author(s):  
Kai Zhang ◽  
JunShuai Xue ◽  
MengYi Cao ◽  
LiYuan Yang ◽  
YongHe Chen ◽  
...  

2017 ◽  
Vol 17 (12) ◽  
pp. 1601-1608 ◽  
Author(s):  
S. Latrach ◽  
E. Frayssinet ◽  
N. Defrance ◽  
S. Chenot ◽  
Y. Cordier ◽  
...  

2013 ◽  
Vol 103 (21) ◽  
pp. 212106 ◽  
Author(s):  
ShengLei Zhao ◽  
Kai Zhang ◽  
Wei Ha ◽  
YongHe Chen ◽  
Peng Zhang ◽  
...  

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document