Trap states in AlGaN channel high-electron-mobility transistors

2013 ◽  
Vol 103 (21) ◽  
pp. 212106 ◽  
Author(s):  
ShengLei Zhao ◽  
Kai Zhang ◽  
Wei Ha ◽  
YongHe Chen ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors

2013 ◽  
Vol 113 (17) ◽  
pp. 174503 ◽  
Author(s):  
Kai Zhang ◽  
JunShuai Xue ◽  
MengYi Cao ◽  
LiYuan Yang ◽  
YongHe Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Channel

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

2017 ◽  
Vol 17 (12) ◽  
pp. 1601-1608 ◽  
Author(s):  
S. Latrach ◽  
E. Frayssinet ◽  
N. Defrance ◽  
S. Chenot ◽  
Y. Cordier ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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