Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

2012 ◽  
Vol 111 (11) ◽  
pp. 114513 ◽  
Author(s):  
JunShuai Xue ◽  
JinCheng Zhang ◽  
Kai Zhang ◽  
Yi Zhao ◽  
LinXia Zhang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Fabrication And Characterization ◽  
Double Channel

Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

2013 ◽  
Vol 22 (5) ◽  
pp. 057304 ◽  
Author(s):  
Kai Zhang ◽  
Meng-Yi Cao ◽  
Yong-He Chen ◽  
Li-Yuan Yang ◽  
Chong Wang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Fabrication And Characterization
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