scholarly journals Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

AIP Advances ◽  
2014 ◽  
Vol 4 (3) ◽  
pp. 037108 ◽  
Author(s):  
Jie-Jie Zhu ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Wei-Wei Chen ◽  
Yue Hao
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
Frequency Dependent ◽  
High Electron Mobility ◽  
Al Content ◽  
Electron Mobility Transistors ◽  
High Al Content

Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors

2013 ◽  
Vol 113 (17) ◽  
pp. 174503 ◽  
Author(s):  
Kai Zhang ◽  
JunShuai Xue ◽  
MengYi Cao ◽  
LiYuan Yang ◽  
YongHe Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Channel

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

2017 ◽  
Vol 17 (12) ◽  
pp. 1601-1608 ◽  
Author(s):  
S. Latrach ◽  
E. Frayssinet ◽  
N. Defrance ◽  
S. Chenot ◽  
Y. Cordier ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Trap states in AlGaN channel high-electron-mobility transistors

2013 ◽  
Vol 103 (21) ◽  
pp. 212106 ◽  
Author(s):  
ShengLei Zhao ◽  
Kai Zhang ◽  
Wei Ha ◽  
YongHe Chen ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap States ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Walid Amir ◽  
Ju-Won Shin ◽  
Ki-Yong Shin ◽  
Jae-Moo Kim ◽  
Chu-Young Cho ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Circuit Model ◽  
Trap Density ◽  
High Electron ◽  
Frequency Dependent ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Conductance Method

AbstractThe characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al0.25Ga0.75N barrier layer functions as a dielectric owing to its high dielectric constant. The interface trap density Dit and border trap density Nbt were extracted from a long-channel field-effect transistor (FET), conventionally known as a FATFET structure, via frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G–V) measurements. The minimum Dit value extracted by the conventional conductance method was 2.5 × 1012 cm−2·eV−1, which agreed well with the actual transistor subthreshold swing of around 142 mV·dec−1. The border trap density Nbt was also extracted from the frequency-dependent C–V characteristics using the distributed circuit model, and the extracted value was 1.5 × 1019 cm−3·eV−1. Low-frequency (1/f) noise measurement provided a clearer picture of the trapping–detrapping phenomena in the Al0.25Ga0.75N layer. The value of the border trap density extracted using the carrier-number-fluctuation (CNF) model was 1.3 × 1019 cm−3·eV−1, which is of a similar level to the extracted value from the distributed circuit model.

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