Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

S. Latrach; E. Frayssinet; N. Defrance; S. Chenot; Y. Cordier; C. Gaquière; H. Maaref

doi:10.1016/j.cap.2017.09.003

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Current Applied Physics ◽

10.1016/j.cap.2017.09.003 ◽

2017 ◽

Vol 17 (12) ◽

pp. 1601-1608 ◽

Cited By ~ 7

Author(s):

S. Latrach ◽

E. Frayssinet ◽

N. Defrance ◽

S. Chenot ◽

Y. Cordier ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap States ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.4802431 ◽

2013 ◽

Vol 113 (17) ◽

pp. 174503 ◽

Cited By ~ 20

Author(s):

Kai Zhang ◽

JunShuai Xue ◽

MengYi Cao ◽

LiYuan Yang ◽

YongHe Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap States ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Channel

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Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/24/12/127306 ◽

2015 ◽

Vol 24 (12) ◽

pp. 127306 ◽

Cited By ~ 1

Author(s):

Peng Zhang ◽

Sheng-Lei Zhao ◽

Jun-Shuai Xue ◽

Jie-Jie Zhu ◽

Xiao-Hua Ma ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Trap States ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Trap states in AlGaN channel high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4832482 ◽

2013 ◽

Vol 103 (21) ◽

pp. 212106 ◽

Cited By ~ 9

Author(s):

ShengLei Zhao ◽

Kai Zhang ◽

Wei Ha ◽

YongHe Chen ◽

Peng Zhang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap States ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4867525 ◽

2014 ◽

Vol 104 (9) ◽

pp. 093504 ◽

Cited By ~ 8

Author(s):

Xiao-Hua Ma ◽

Wei-Wei Chen ◽

Bin Hou ◽

Kai Zhang ◽

Jie-Jie Zhu ◽

...

Keyword(s):

Electron Mobility ◽

Schottky Contact ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap States ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/24/11/117305 ◽

2015 ◽

Vol 24 (11) ◽

pp. 117305 ◽

Cited By ~ 2

Author(s):

Jun Luo ◽

Sheng-Lei Zhao ◽

Min-Han Mi ◽

Bin Hou ◽

Xiao-Lei Yang ◽

...

Keyword(s):

Electron Mobility ◽

Reactive Ion Etching ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap States ◽

Ion Etching ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

AIP Advances ◽

10.1063/1.4869020 ◽

2014 ◽

Vol 4 (3) ◽

pp. 037108 ◽

Cited By ~ 16

Author(s):

Jie-Jie Zhu ◽

Xiao-Hua Ma ◽

Bin Hou ◽

Wei-Wei Chen ◽

Yue Hao

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap States ◽

Frequency Dependent ◽

High Electron Mobility ◽

Al Content ◽

Electron Mobility Transistors ◽

High Al Content

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Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

Applied Physics Letters ◽

10.1063/1.4928477 ◽

2015 ◽

Vol 107 (6) ◽

pp. 063501 ◽

Cited By ~ 5

Author(s):

Yunlong He ◽

Peixian Li ◽

Chong Wang ◽

Xiangdong Li ◽

Shenglei Zhao ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap States ◽

High Electron Mobility ◽

Enhancement Mode ◽

Channel Layer ◽

Electron Mobility Transistors ◽

Double Heterostructures

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

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Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108050 ◽

2021 ◽

pp. 108050

Author(s):

Maria Glória Caño de Andrade ◽

Luis Felipe de Oliveira Bergamim ◽

Braz Baptista Júnior ◽

Carlos Roberto Nogueira ◽

Fábio Alex da Silva ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Electron Mobility Transistors

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