scholarly journals Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

2013 ◽  
Vol 113 (11) ◽  
pp. 114303 ◽  
Author(s):  
Mantu K. Hudait ◽  
Yan Zhu
Keyword(s):  
Oxide Film ◽  
Energy Band ◽  
Atomic Layer ◽  
Band Alignment

scholarly journals Positive onset potential and stability of Cu2O-based photocathodes in water splitting by atomic layer deposition of a Ga2O3buffer layer

2015 ◽  
Vol 8 (5) ◽  
pp. 1493-1500 ◽  
Author(s):  
Changli Li ◽  
Takashi Hisatomi ◽  
Osamu Watanabe ◽  
Mamiko Nakabayashi ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Energy Band ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Band Alignment ◽  
Onset Potential ◽  
Layer Deposition

The improved energy band alignment of Pt/TiO2/Ga2O3/Cu2O structure results in a positive onset potential of ∼1 Vvs.RHE and a stable cathodic photocurrent under appropriate TiO2deposition temperature.

Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

2013 ◽  
Vol 113 (4) ◽  
pp. 044112 ◽  
Author(s):  
Feng Zhang ◽  
Guosheng Sun ◽  
Liu Zheng ◽  
Shengbei Liu ◽  
Bin Liu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Band ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition ◽  
Al2o3 Films

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

2010 ◽  
Vol 96 (4) ◽  
pp. 042903 ◽  
Author(s):  
Rahul Suri ◽  
Casey J. Kirkpatrick ◽  
Daniel J. Lichtenwalner ◽  
Veena Misra
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Band ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition

Energy-band alignment of atomic layer deposited (HfO 2 ) x (Al 2 O 3 ) 1 − x gate dielectrics on 4H-SiC

2015 ◽  
Vol 24 (3) ◽  
pp. 038103 ◽  
Author(s):  
Ren-Xu Jia ◽  
Lin-Peng Dong ◽  
Ying-Xi Niu ◽  
Cheng-Zhan Li ◽  
Qing-Wen Song ◽  
...  
Keyword(s):  
Energy Band ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Band Alignment

Energy-band alignment of (HfO 2 ) x (Al 2 O 3 ) 1-x gate dielectrics deposited by atomic layer deposition on β-Ga 2 O 3 (-201)

2018 ◽  
Vol 433 ◽  
pp. 530-534 ◽  
Author(s):  
Lei Yuan ◽  
Hongpeng Zhang ◽  
Renxu Jia ◽  
Lixin Guo ◽  
Yimen Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Band ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (100)

2011 ◽  
Vol 257 (16) ◽  
pp. 7305-7309 ◽  
Author(s):  
Yue Huang ◽  
Yan Xu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Oxide Film ◽  
Niobium Oxide ◽  
Atomic Layer ◽  
Thermal Stability Of
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