Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (100)

2011 ◽  
Vol 257 (16) ◽  
pp. 7305-7309 ◽  
Author(s):  
Yue Huang ◽  
Yan Xu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Oxide Film ◽  
Niobium Oxide ◽  
Atomic Layer ◽  
Thermal Stability Of

Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2226-2229 ◽  
Author(s):  
Tae Joo Park ◽  
Jeong Hwan Kim ◽  
Jae Hyuck Jang ◽  
Minha Seo ◽  
Kwang Duk Na ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Layer ◽  
Atomic Layer ◽  
Thermal Stability Of

Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O

2021 ◽  
Author(s):  
Changyu Park ◽  
Changmin Lee ◽  
Woohui Lee ◽  
Jehoon Lee ◽  
Jinyong Kim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Thermal Stability Of

Thermal stability of an ultrathin hafnium oxide film on plasma nitrided Si(100)

2013 ◽  
Vol 616 ◽  
pp. 104-109 ◽  
Author(s):  
K. Skaja ◽  
F. Schönbohm ◽  
D. Weier ◽  
T. Lühr ◽  
C. Keutner ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Oxide Film ◽  
Hafnium Oxide ◽  
Thermal Stability Of

Thermal Stability Study of the Interconnect System with Fluorinated Silicate Glass as IMD Layers

1997 ◽  
Vol 476 ◽  
Author(s):  
Weidan Li ◽  
Wilbur Catabay
Keyword(s):  
Thermal Stability ◽  
Oxide Film ◽  
Silicate Glass ◽  
Elevated Temperatures ◽  
Stability Test ◽  
Silicon Nitride Film ◽  
Barrier Materials ◽  
Device Reliability ◽  
Interconnect System ◽  
Thermal Stability Of

AbstractWhile fluorinated silicate glass (FSG) has been proposed for low k inter-metal dielectric (IMD) applications in a multi-level interconnect system either as the only IMD material, or as one of the materials for a multi-layer IMD system, thermal stability of the FSG film and its impact on device reliability remain a concern for this application. In this study, SIMS, SEM, and optical microscope analyses were carried out to evaluate the thermal stability of the FSG films and the possible reactions between FSG and metals. It was observed that at elevated temperatures fluorine tends to diffuse into an undoped oxide film rather than be desorbed. The data indicate that F diffuses 3.5 times faster in a silicon oxide film than in a silicon nitride film. Sub-half micron devices were processed with FSG as IMD layers. The devices were tested using an intensive thermal stability test methodology. A TiSi2 reaction with F which diffused from the FSG film was observed under optical microscopy. This reaction caused TiSi2 delamination. Electrical characterization of devices was performed before and after the thermal stability test. Although the device performance did not change greatly, the reaction certainly affects the long term device reliability (vide infra). Barrier materials were investigated to solve the F diffusion problem. With the proper diffusion barrier, the problem of the fluorine reaction with TiSi2 and subsequent metal blistering was eliminated.

scholarly journals Thermal Stability of TiN Coated Cubic Boron Nitride Powder

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1642
Author(s):  
Benjamin Hering ◽  
Anne-Kathrin Wolfrum ◽  
Tim Gestrich ◽  
Mathias Herrmann
Keyword(s):  
Thermal Stability ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Atomic Layer ◽  
Normal Pressure ◽  
Ceramic Composites ◽  
Recrystallization Process ◽  
Layer Deposition ◽  
Boron Nitride Powder ◽  
Thermal Stability Of

Wear-resistant, super hard ceramic composites based on cubic boron nitride (cBN) are of great interest to industry. However, cBN is metastable under sintering conditions at normal pressure and converts into the soft hexagonal BN (hBN). Therefore, efforts are being made to avoid this process. Besides short sintering times, the use of coated cBN-particles is a way to minimize this process. Therefore, the thermal stability of TiN coated cBN powders in high purity argon and nitrogen atmospheres up to temperatures of 1600 °C was investigated by thermogravimetry, X-ray phase analysis, scanning electron microscopy and Raman spectroscopy. The TiN coating was prepared by the atomic layer deposition (ALD)-method. The investigations showed that the TiN layer reacts in Ar at T ≥ 1200 °C with the cBN and forms a porous TiB2 layer. No reaction takes place in nitrogen up to temperatures of 1600 °C. Nevertheless, the 20 and 50 nm thin coatings also undergo a recrystallization process during heat treatment up to temperatures of 1600 °C.

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