Energy-band alignment of (HfO 2 ) x (Al 2 O 3 ) 1-x gate dielectrics deposited by atomic layer deposition on β-Ga 2 O 3 (-201)

2018 ◽  
Vol 433 ◽  
pp. 530-534 ◽  
Author(s):  
Lei Yuan ◽  
Hongpeng Zhang ◽  
Renxu Jia ◽  
Lixin Guo ◽  
Yimen Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Band ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

2010 ◽  
Vol 96 (4) ◽  
pp. 042903 ◽  
Author(s):  
Rahul Suri ◽  
Casey J. Kirkpatrick ◽  
Daniel J. Lichtenwalner ◽  
Veena Misra
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Band ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition

scholarly journals Positive onset potential and stability of Cu2O-based photocathodes in water splitting by atomic layer deposition of a Ga2O3buffer layer

2015 ◽  
Vol 8 (5) ◽  
pp. 1493-1500 ◽  
Author(s):  
Changli Li ◽  
Takashi Hisatomi ◽  
Osamu Watanabe ◽  
Mamiko Nakabayashi ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Energy Band ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Band Alignment ◽  
Onset Potential ◽  
Layer Deposition

The improved energy band alignment of Pt/TiO2/Ga2O3/Cu2O structure results in a positive onset potential of ∼1 Vvs.RHE and a stable cathodic photocurrent under appropriate TiO2deposition temperature.

Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

2013 ◽  
Vol 113 (4) ◽  
pp. 044112 ◽  
Author(s):  
Feng Zhang ◽  
Guosheng Sun ◽  
Liu Zheng ◽  
Shengbei Liu ◽  
Bin Liu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Band ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition ◽  
Al2o3 Films

Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Atomic layer deposition triggered Fe-In-S cluster and gradient energy band in ZnInS photoanode for improved oxygen evolution reaction

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Linxing Meng ◽  
Jinlu He ◽  
Xiaolong Zhou ◽  
Kaimo Deng ◽  
Weiwei Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Energy Band ◽  
High Performance ◽  
Carrier Transport ◽  
Atomic Layer ◽  
Onset Potential ◽  
Layer Deposition ◽  
Gradient Energy

AbstractVast bulk recombination of photo-generated carriers and sluggish surface oxygen evolution reaction (OER) kinetics severely hinder the development of photoelectrochemical water splitting. Herein, through constructing a vertically ordered ZnInS nanosheet array with an interior gradient energy band as photoanode, the bulk recombination of photogenerated carriers decreases greatly. We use the atomic layer deposition technology to introduce Fe-In-S clusters into the surface of photoanode. First-principles calculations and comprehensive characterizations indicate that these clusters effectively lower the electrochemical reaction barrier on the photoanode surface and promote the surface OER reaction kinetics through precisely affecting the second and third steps (forming processes of O* and OOH*) of the four-electron reaction. As a result, the optimal photoanode exhibits the high performance with a significantly enhanced photocurrent of 5.35 mA cm−2 at 1.23 VRHE and onset potential of 0.09 VRHE. Present results demonstrate a robust platform for controllable surface modification, nanofabrication, and carrier transport.

Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

2005 ◽  
Vol 98 (5) ◽  
pp. 054104 ◽  
Author(s):  
D. H. Triyoso ◽  
R. I. Hegde ◽  
S. Zollner ◽  
M. E. Ramon ◽  
S. Kalpat ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Titanium Addition ◽  
Layer Deposition ◽  
Film Characteristics

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

2019 ◽  
Vol 1 (4) ◽  
pp. 617-624 ◽  
Author(s):  
Seung Min Lee ◽  
Yoonseo Jang ◽  
Jongho Jung ◽  
Jung Hwan Yum ◽  
Eric S. Larsen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Alignment ◽  
Interface Defects ◽  
Layer Deposition
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