scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

P-Type Conductive Behaviors of AlN Co-Doped ZnO Films Deposited by the Atomic Layer Deposition

2012 ◽  
pp. 19-25
Author(s):  
Yu-Mi Kim ◽  
Kwang-Seok Jeong ◽  
Ho-Jin Yun ◽  
Seung-Dong Yang ◽  
Sang-Youl Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition

2015 ◽  
Vol 33 ◽  
pp. 154-160 ◽  
Author(s):  
Kyung Yong Ko ◽  
Hyemin Kang ◽  
Wonseon Lee ◽  
Chang-Wan Lee ◽  
Jusang Park ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Core Shell ◽  
Nitrogen Doped ◽  
Layer Deposition ◽  
Doped Zno

Preparation of boron-doped ZnO thin films by photo-atomic layer deposition

2001 ◽  
Vol 65 (1-4) ◽  
pp. 125-132 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Saito ◽  
K. Takahashi ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Boron Doped ◽  
Layer Deposition ◽  
Doped Zno

In situ Al-doped ZnO films by atomic layer deposition with an interrupted flow

2015 ◽  
Vol 165 ◽  
pp. 245-252 ◽  
Author(s):  
Jheng-Ming Huang ◽  
Ching-Shun Ku ◽  
Chih-Ming Lin ◽  
San-Yuan Chen ◽  
Hsin-Yi Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
Interrupted Flow

Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

2018 ◽  
Vol 39 (3) ◽  
pp. 033004 ◽  
Author(s):  
Li Chen ◽  
Xinliang Chen ◽  
Zhongxin Zhou ◽  
Sheng Guo ◽  
Ying Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characteristics ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Doped Zno
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