scholarly journals Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

2013 ◽  
Vol 102 (9) ◽  
pp. 093109 ◽  
Author(s):  
M. K. Hudait ◽  
Y. Zhu ◽  
D. Maurya ◽  
S. Priya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Energy Band ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Band Alignment

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 181-186 ◽  
Author(s):  
G.X. Shi ◽  
P. Jin ◽  
B. Xu ◽  
C.M. Li ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Annealing Effect

Comparison of morphology of CdTe/CdMnTe interfaces in heterostructures grown by molecular beam epitaxy in a standard and atomic layer modes

1998 ◽  
Vol 72 (9) ◽  
pp. 1104-1106 ◽  
Author(s):  
M. Godlewski ◽  
T. Wojtowicz ◽  
G. Karczewski ◽  
J. Kossut ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer

Band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy

2005 ◽  
Vol 86 (26) ◽  
pp. 261904 ◽  
Author(s):  
M. Izadifard ◽  
T. Mtchedlidze ◽  
I. Vorona ◽  
W. M. Chen ◽  
I. A. Buyanova ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Alignment ◽  
Gas Source

Deep levels in GaAs grown by atomic layer molecular beam epitaxy

1994 ◽  
Vol 65 (22) ◽  
pp. 2848-2850 ◽  
Author(s):  
E. Gombia ◽  
R. Mosca ◽  
A. Bosacchi ◽  
M. Madellaf ◽  
S. Franchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Deep Levels

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates

2019 ◽  
Vol 963 ◽  
pp. 127-130
Author(s):  
Jörg Pezoldt ◽  
Charbel Zgheib ◽  
Thomas Stauden ◽  
Gernot Ecke ◽  
Thomas Kups ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Solubility Limit ◽  
Solid Solubility Limit ◽  
Transmission Electron ◽  
Section Electron ◽  
Heteroepitaxial Layers ◽  
Section Electron Microscopy

Ternary (Si1-xCy)Gex+y solid solutions were grown on Si-face 4H-SiC applying atomic layer molecular beam epitaxy at low temperatures. The grown layers consist of twinned 3C-SiC revealed by cross section electron microscopy. The germanium was incorporated on silicon lattice sites as revealed by atomic location by channeling enhanced microanalysis transmission electron microscopy studies. The Ge concentration of the grown 3C-(Si1-xCy)Gex+y heteroepitaxial layers decreases with increasing growth temperatures, but exceeds the solid solubility limit.

Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation

1991 ◽  
Vol 30 (Part 2, No. 1B) ◽  
pp. L106-L109 ◽  
Author(s):  
Shin Yokoyama ◽  
Takayuki Ishibashi ◽  
Masaaki Yamagami ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Uv Irradiation ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer Growth

Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 261-265
Author(s):  
A. Bosacchi ◽  
E. Gombia ◽  
R. Mosca ◽  
S. Franchi ◽  
A. Carnera ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Deep Levels ◽  
Shallow Donors
Sign in / Sign up

Export Citation Format

Share Document