Light-induced degradation in n-type Czochralski silicon by boron-doping and thermal donor compensation

2012 ◽  
Vol 112 (8) ◽  
pp. 084509 ◽  
Author(s):  
Peng Chen ◽  
Xuegong Yu ◽  
Yichao Wu ◽  
Jianjiang Zhao ◽  
Deren Yang
Keyword(s):  
Boron Doping ◽  
Czochralski Silicon ◽  
Thermal Donor

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Kinetic Model of Thermal Donor Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
K. F. Kelton ◽  
R. Falster
Keyword(s):  
Interstitial Oxygen ◽  
Oxygen Loss ◽  
Free Oxygen ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Cluster Evolution ◽  
Oxygen Precipitation ◽  
High Diffusion Rate ◽  
Normal Diffusion ◽  
Small Clusters

ABSTRACTKinetic aspects of thermal donor (TD) formation in Czochralski silicon are shown to be consistent with the evolution of small oxygen clusters, as described within the classical theory of nucleation. Predictions for TD generation and interstitial oxygen loss are presented. Favorable agreement with experimental data requires that the rate constants describing cluster evolution be increased over those expected for a oliffusion-limited flux based on a normal diffusion coefficient for oxygen in silicon. This may signal an anomalously high diffusion rate for temperatures less than 500°C, as has been suggested by others. However, it may instead signal an enhanced concentration of free oxygen near clusters smaller than the critical size for nucleation. This is expected when the interfacial attachment rates become comparable with the rates at which oxygen atoms arrive in the vicinity of the sub-critical clusters. The link between thermal donor generation and oxygen precipitation processes demonstrated here provides a consistent framework for better understanding and controlling oxygen precipitation in silicon. Further, the kinetic TD generation and oxygen loss data provide a new window into the dynamical processes for small clusters, which underlie all nucleation phenomena.

Thermal donor formation in electron‐irradiated Czochralski silicon

1986 ◽  
Vol 49 (21) ◽  
pp. 1435-1437 ◽  
Author(s):  
Johan Svensson ◽  
Bengt G. Svensson ◽  
J. Lennart Lindström
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

2014 ◽  
Vol 61 (5) ◽  
pp. 1241-1245 ◽  
Author(s):  
Florent Tanay ◽  
Sebastien Dubois ◽  
Jordi Veirman ◽  
Nicolas Enjalbert ◽  
Julie Stendera ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5577-5584 ◽  
Author(s):  
Akito Hara ◽  
Masaaki Koizuka ◽  
Masaki Aoki ◽  
Tetsuo Fukuda ◽  
Hiroshi Yamada-Kaneta ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Donor Formation

Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes

1999 ◽  
Vol 69-70 ◽  
pp. 551-556 ◽  
Author(s):  
Reinhart Job ◽  
J.A. Weima ◽  
G. Grabosch ◽  
D. Borchert ◽  
Wolfgang R. Fahrner ◽  
...  
Keyword(s):  
Low Temperature ◽  
Formation Processes ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

The Conversion of Czochralski Silicon from P-Type to N-Type by Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 469 ◽  
Author(s):  
R. Job ◽  
D. Borchert ◽  
Y. A. Bumay ◽  
W. R. Fahrner ◽  
G. Grabosch ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Capacitance Voltage ◽  
Junction Formation ◽  
One Step ◽  
Donor Formation ◽  
The One ◽  
P Type

ABSTRACTOur experiments show a hydrogen plasma assisted creation of p-n junctions in p-type Cz silicon due to a hydrogen enhanced thermal donor (TD) formation at temperatures ≤450 °C. Applying DC or HF plasma treatments a conversion of p-type into n-type Cz silicon by TD formation occurs. One can distinguish one step processes (p-n junction formation appears just after the plasma exposure) and two step processes (p-n junction formation requires subsequent post hydrogenation annealing). The samples are studied by depth resolved spreading resistance probe (SRP), capacitance-voltage (CV) and Hall measurements. For the one step processes a kinetic model for hydrogen enhanced TD formation is presented.

Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

2000 ◽  
Vol 147 (2) ◽  
pp. 756 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Mitsuharu Yonemura ◽  
Toshiaki Ono ◽  
Eiichi Asayama ◽  
...  
Keyword(s):  
Boron Doping ◽  
Silicon Substrates ◽  
Czochralski Silicon ◽  
Oxygen Precipitation
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