Thermal donor formation in electron‐irradiated Czochralski silicon

1986 ◽  
Vol 49 (21) ◽  
pp. 1435-1437 ◽  
Author(s):  
Johan Svensson ◽  
Bengt G. Svensson ◽  
J. Lennart Lindström
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

2014 ◽  
Vol 61 (5) ◽  
pp. 1241-1245 ◽  
Author(s):  
Florent Tanay ◽  
Sebastien Dubois ◽  
Jordi Veirman ◽  
Nicolas Enjalbert ◽  
Julie Stendera ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5577-5584 ◽  
Author(s):  
Akito Hara ◽  
Masaaki Koizuka ◽  
Masaki Aoki ◽  
Tetsuo Fukuda ◽  
Hiroshi Yamada-Kaneta ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Donor Formation

Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes

1999 ◽  
Vol 69-70 ◽  
pp. 551-556 ◽  
Author(s):  
Reinhart Job ◽  
J.A. Weima ◽  
G. Grabosch ◽  
D. Borchert ◽  
Wolfgang R. Fahrner ◽  
...  
Keyword(s):  
Low Temperature ◽  
Formation Processes ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

The Conversion of Czochralski Silicon from P-Type to N-Type by Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 469 ◽  
Author(s):  
R. Job ◽  
D. Borchert ◽  
Y. A. Bumay ◽  
W. R. Fahrner ◽  
G. Grabosch ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Capacitance Voltage ◽  
Junction Formation ◽  
One Step ◽  
Donor Formation ◽  
The One ◽  
P Type

ABSTRACTOur experiments show a hydrogen plasma assisted creation of p-n junctions in p-type Cz silicon due to a hydrogen enhanced thermal donor (TD) formation at temperatures ≤450 °C. Applying DC or HF plasma treatments a conversion of p-type into n-type Cz silicon by TD formation occurs. One can distinguish one step processes (p-n junction formation appears just after the plasma exposure) and two step processes (p-n junction formation requires subsequent post hydrogenation annealing). The samples are studied by depth resolved spreading resistance probe (SRP), capacitance-voltage (CV) and Hall measurements. For the one step processes a kinetic model for hydrogen enhanced TD formation is presented.

The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon

1999 ◽  
Vol 69-70 ◽  
pp. 409-416 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
A.N. Petlitskii ◽  
Reinhart Job ◽  
Wolfgang R. Fahrner ◽  
A.K. Fedotov ◽  
...  
Keyword(s):  
Heat Treatments ◽  
Low Energy ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon

1999 ◽  
Vol 58 (1-2) ◽  
pp. 91-94 ◽  
Author(s):  
A.G. Ulyashin ◽  
A.I. Ivanov ◽  
I.A. Khorunzhii ◽  
R. Job ◽  
W.R. Fahrner ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type ◽  
Post Implantation

On the Kinetics of Oxygen Clustering and Thermal Donor Formation in Czochralski Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
T. Y. Tan ◽  
R. Kleinhenz ◽  
C. P. Schneider
Keyword(s):  
Oxygen Concentration ◽  
Kinetic Models ◽  
The Other ◽  
Concentration Data ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
Small Clusters ◽  
Kinetics Of ◽  
Overall Kinetics

ABSTRACTWe report the results of an experiment of annealing Czochralski silicon at 450°C for up to 500 hrs. Concentrations of oxygen atoms (Ci) and thermal donors (TD) have both been monitored. Analyses of the oxygen concentration data yielded the apparent interpretation that the overall kinetics is dominated by the formation of small clusters (dimers and trimers). This cannot account for TD formation, since they are supposed to be larger clusters. On the other hand, analyses of existing TD kinetic models did not yield calculated Ci values to satisfactorily account for the present Ci data. We believe that a satisfactory TD model is not yet available.

Measurements of Enhanced Oxygen Diffusion in Silicon During Thermal Donor Formation: New Evidence for Possible Mechanisms

1989 ◽  
Vol 163 ◽  
Author(s):  
A.R. Brown ◽  
R. Murray ◽  
R.C. Newman ◽  
J.H. Tucker
Keyword(s):  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Loss ◽  
Enhanced Diffusion ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Annealed Material ◽  
Primary Mechanism ◽  
Donor Formation ◽  
New Evidence

AbstractCzochralski silicon has been heated in a H-plasma at temperatures in the range 300-450°C, and compared with furnace annealed material. Plasma treatments produce enhanced rates of oxygen diffusion jumps, loss of oxygen from solution and formation of thermal donor centres. The available evidence indicates that atomic hydrogen catalyses the enhancements via the oxygen diffusion rate. Donor concentrations greater than 1017cm-3 have been observed in samples heated in a plasma at 350°C. Doubts have been raised about dimer formation being the primary mechanism for oxygen loss in furnace anneals at 350°C, but invoking enhanced diffusion leads to a conflict with stress dichroism data.

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