The Conversion of Czochralski Silicon from P-Type to N-Type by Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 469 ◽  
Author(s):  
R. Job ◽  
D. Borchert ◽  
Y. A. Bumay ◽  
W. R. Fahrner ◽  
G. Grabosch ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Capacitance Voltage ◽  
Junction Formation ◽  
One Step ◽  
Donor Formation ◽  
The One ◽  
P Type

ABSTRACTOur experiments show a hydrogen plasma assisted creation of p-n junctions in p-type Cz silicon due to a hydrogen enhanced thermal donor (TD) formation at temperatures ≤450 °C. Applying DC or HF plasma treatments a conversion of p-type into n-type Cz silicon by TD formation occurs. One can distinguish one step processes (p-n junction formation appears just after the plasma exposure) and two step processes (p-n junction formation requires subsequent post hydrogenation annealing). The samples are studied by depth resolved spreading resistance probe (SRP), capacitance-voltage (CV) and Hall measurements. For the one step processes a kinetic model for hydrogen enhanced TD formation is presented.

P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Y. L. Huang ◽  
E. Simoen ◽  
R. Job ◽  
C. Claeys ◽  
W. Düngen ◽  
...  
Keyword(s):  
Deep Level ◽  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Current Voltage ◽  
Donor Formation ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
P Type

AbstractA rather large amount of shallow donors is created in p-type Czochralski silicon (Cz Si) wafers after a hydrogen plasma exposure at ∼270 °C (substrate temperature) and a subsequent annealing in the temperature range of 350-450 °C. This two-step process has been used for the fabrication p-n junction diodes at low temperatures. Current-voltage characteristics show that the breakdown voltages of these diodes are higher than 100 V. The diode leakage is found to be improved after slow ramp annealing at temperatures up to 250 °C. Deep level transient spectroscopy measurements reveal that the oxygen related thermal donor is not the dominant doping species as expected before.

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

A Two-Step Low-Temperature Process For A P-N Junction Formation Due To Hydrogen Enhanced Thermal Donor Formation In P-Type Czochralski Silicon

1998 ◽  
Vol 513 ◽  
Author(s):  
R. Job ◽  
W. R. Fahrner ◽  
N. M. Kazuchits ◽  
A. G. Ulyashin
Keyword(s):  
Hydrogen Diffusion ◽  
Induced Current ◽  
Junction Depth ◽  
Type Region ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Junction Formation ◽  
Donor Formation ◽  
P Type ◽  
Low Temperature Process

ABSTRACTThe incorporation of hydrogen into standard p-type Czochralski (Cz) silicon (≥1 Ωcm) by a 110 MHz plasma treatment at 260°C leads to the formation of an n-type region due to hydrogen enhanced thermal donor (TD) formation in hydrogenated regions of the wafer, if a subsequent annealing in air is applied at 450°C. Spreading resistance probe (SRP) and light beam induced current (LBIC) measurements were used for the experimental analysis. The p-n junction depth, i. e. the counter doping by TDs, depends on the initial doping level of the p-type substrate, and therefore on the post-hydrogenation annealing time. The penetration of the n-type region into the wafer bulk is driven by a rapid hydrogen diffusion. The essential process for a TD generation is the creation of metastable hydrogen molecular species around 260°C and their decay at 450°C.

Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes

1999 ◽  
Vol 69-70 ◽  
pp. 551-556 ◽  
Author(s):  
Reinhart Job ◽  
J.A. Weima ◽  
G. Grabosch ◽  
D. Borchert ◽  
Wolfgang R. Fahrner ◽  
...  
Keyword(s):  
Low Temperature ◽  
Formation Processes ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon

1999 ◽  
Vol 69-70 ◽  
pp. 409-416 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
A.N. Petlitskii ◽  
Reinhart Job ◽  
Wolfgang R. Fahrner ◽  
A.K. Fedotov ◽  
...  
Keyword(s):  
Heat Treatments ◽  
Low Energy ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon

1999 ◽  
Vol 58 (1-2) ◽  
pp. 91-94 ◽  
Author(s):  
A.G. Ulyashin ◽  
A.I. Ivanov ◽  
I.A. Khorunzhii ◽  
R. Job ◽  
W.R. Fahrner ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type ◽  
Post Implantation

DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 547-552 ◽  
Author(s):  
Yue Long Huang ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
Reinhart Job ◽  
Yue Ma ◽  
...  
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Free Carriers ◽  
Shallow Donors ◽  
P Type

P-n junctions are created in p-type Czochralski silicon after a low temperature (270°C) hydrogen plasma exposure. This is attributed to the formation of hydrogen-related shallow donors. A deep level (E1) with an activation energy of about EC-0.12 eV is observed by DLTS measurement and assigned to a metastable state of the hydrogen-related shallow donors. At an annealing temperature of 340°C, the E1 centres disappear and oxygen thermal donors appear. The concentrations of the oxygen thermal donors are found typically to be 2-3 decades lower than that required for over-compensating the initial p-type doping and for contributing the excess free carriers.

Thermal donor formation in electron‐irradiated Czochralski silicon

1986 ◽  
Vol 49 (21) ◽  
pp. 1435-1437 ◽  
Author(s):  
Johan Svensson ◽  
Bengt G. Svensson ◽  
J. Lennart Lindström
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

2014 ◽  
Vol 61 (5) ◽  
pp. 1241-1245 ◽  
Author(s):  
Florent Tanay ◽  
Sebastien Dubois ◽  
Jordi Veirman ◽  
Nicolas Enjalbert ◽  
Julie Stendera ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation
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