Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Hong-An Shih; Masahiro Kudo; Toshi-kazu Suzuki

doi:10.1063/1.4737876

Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Applied Physics Letters ◽

10.1063/1.4737876 ◽

2012 ◽

Vol 101 (4) ◽

pp. 043501 ◽

Cited By ~ 30

Author(s):

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Temperature Mapping ◽

Frequency Temperature

Download Full-text

Characterization of gate-control efficiency in AlN/AlGaN/GaN metal-insulator-semiconductor structure by capacitance-frequency-temperature mapping

10.7567/ssdm.2012.f-7-3 ◽

2012 ◽

Author(s):

H. A. Shih ◽

T. Q. Nguyen ◽

M. Kudo ◽

T. Suzuki

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Temperature Mapping ◽

Control Efficiency ◽

Gate Control ◽

Frequency Temperature

Download Full-text

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4901290 ◽

2014 ◽

Vol 116 (18) ◽

pp. 184507 ◽

Cited By ~ 8

Author(s):

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Semiconductor Devices ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Temperature Mapping ◽

Control Efficiency ◽

Gate Control ◽

Frequency Temperature

Download Full-text

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

Thin Solid Films ◽

10.1016/0040-6090(89)90001-1 ◽

1989 ◽

Vol 168 (2) ◽

pp. 157-163 ◽

Cited By ~ 3

Author(s):

B. Ullrich ◽

F. Kuchar ◽

R. Meisels ◽

F. Olcaytug ◽

A. Jachimowicz

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

P Type

Download Full-text

Investigations of metal-insulator-semiconductor structure in-homogeneities using a small-size mercury probe

Microelectronics Reliability ◽

10.1016/0026-2714(85)90335-x ◽

1985 ◽

Vol 25 (3) ◽

pp. 593

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text

Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Cited By ~ 5

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text

Propagation loss of surface acoustic waves on a monolithic metal‐insulator‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.343099 ◽

1989 ◽

Vol 65 (2) ◽

pp. 651-661 ◽

Cited By ~ 2

Author(s):

S. Mitsutsuka ◽

T. Okamoto ◽

T. Niitsuma ◽

S. Minagawa

Keyword(s):

Acoustic Waves ◽

Surface Acoustic Waves ◽

Semiconductor Structure ◽

Propagation Loss ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text

InP-SiO2 metal-insulator-semiconductor structure parameters investigated with DLTS and other capacitance techniques

Solid State Communications ◽

10.1016/0038-1098(87)90748-4 ◽

1987 ◽

Vol 64 (4) ◽

pp. 411-416 ◽

Cited By ~ 5

Author(s):

P. Bogdanski ◽

F. Murray ◽

J.P. Piel

Keyword(s):

Semiconductor Structure ◽

Structure Parameters ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text

Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure

Journal of Applied Physics ◽

10.1063/1.369381 ◽

1999 ◽

Vol 85 (10) ◽

pp. 7471-7476 ◽

Cited By ~ 13

Author(s):

Kinya Ashikaga ◽

Toshio Ito

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Semiconductor Structure ◽

Memory Retention ◽

Simple Metal ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Retention Characteristics

Download Full-text

Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.05.119 ◽

2017 ◽

Vol 718 ◽

pp. 104-111 ◽

Cited By ~ 6

Author(s):

M. Chandra Sekhar ◽

Nallabala Nanda Kumar Reddy ◽

Harish Sharma Akkera ◽

B. Purusottam Reddy ◽

V. Rajendar ◽

...

Keyword(s):

Electronic Properties ◽

Oxide Layer ◽

Layer Thickness ◽

Annealing Temperature ◽

Semiconductor Structure ◽

Oxide Layer Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Structural And Electronic Properties

Download Full-text

Nonvolatile Memory Effect in a Au/Cu–ZnO/p-Si Type of Metal–Insulator–Semiconductor Structure

IEEE Electron Device Letters ◽

10.1109/led.2011.2169231 ◽

2011 ◽

Vol 32 (12) ◽

pp. 1746-1748 ◽

Cited By ~ 7

Author(s):

T. Ghosh ◽

D. Basak

Keyword(s):

Memory Effect ◽

Nonvolatile Memory ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Download Full-text