Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Hong-An Shih; Masahiro Kudo; Toshi-kazu Suzuki

doi:10.1063/1.4901290

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4901290 ◽

2014 ◽

Vol 116 (18) ◽

pp. 184507 ◽

Cited By ~ 8

Author(s):

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Semiconductor Devices ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Temperature Mapping ◽

Control Efficiency ◽

Gate Control ◽

Frequency Temperature

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Characterization of gate-control efficiency in AlN/AlGaN/GaN metal-insulator-semiconductor structure by capacitance-frequency-temperature mapping

10.7567/ssdm.2012.f-7-3 ◽

2012 ◽

Author(s):

H. A. Shih ◽

T. Q. Nguyen ◽

M. Kudo ◽

T. Suzuki

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Temperature Mapping ◽

Control Efficiency ◽

Gate Control ◽

Frequency Temperature

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Effect of photochemical etching on interface state density of Ga0.47In0.53As metal/insulator/semiconductor diodes

Electronics Letters ◽

10.1049/el:19870630 ◽

1987 ◽

Vol 23 (17) ◽

pp. 891 ◽

Cited By ~ 1

Author(s):

A. Aoki ◽

S. Miyoshi ◽

J. Shirafuji

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Photochemical Etching

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Effects of interface state density on the carrier transport and performance of metal-insulator-semiconductor (MIS) type thin film solar cells

Journal of Physics Conference Series ◽

10.1088/1742-6596/1481/1/012005 ◽

2020 ◽

Vol 1481 ◽

pp. 012005

Author(s):

Fandi Oktasendra ◽

Rahmat Hidayat ◽

Rizky Indra Utama

Keyword(s):

Thin Film ◽

Solar Cells ◽

Carrier Transport ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Thin Film Solar Cells ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

And Performance

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InGaAsPn‐channel inversion‐mode metal‐insulator‐semiconductor field‐effect transistor with low interface state density

Journal of Applied Physics ◽

10.1063/1.328582 ◽

1981 ◽

Vol 52 (10) ◽

pp. 6386-6394 ◽

Cited By ~ 28

Author(s):

Yukinobu Shinoda ◽

Takeshi Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Inversion Mode ◽

Effect Transistor

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Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

Applied Physics Letters ◽

10.1063/1.117933 ◽

1996 ◽

Vol 69 (2) ◽

pp. 230-232 ◽

Cited By ~ 32

Author(s):

Zhi Chen ◽

Dae‐Gyu Park ◽

Francke Stengal ◽

S. Noor Mohammad ◽

Hadis Morkoç

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

P Type

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Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.104101 ◽

2017 ◽

Vol 56 (10) ◽

pp. 104101

Author(s):

Hirokuni Tokuda ◽

Joel T. Asubar ◽

Masaaki Kuzuhara

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Interface State ◽

State Density ◽

Interface State Density ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors

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Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes

Materials Science and Engineering B ◽

10.1016/j.mseb.2020.114707 ◽

2020 ◽

Vol 262 ◽

pp. 114707

Author(s):

M. Whiteside ◽

S. Arulkumaran ◽

Y. Dikme ◽

A. Sandupatla ◽

G.I. Ng

Keyword(s):

Low Temperature ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Temperature Epitaxy

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Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Applied Physics Letters ◽

10.1063/1.4737876 ◽

2012 ◽

Vol 101 (4) ◽

pp. 043501 ◽

Cited By ~ 30

Author(s):

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Temperature Mapping ◽

Frequency Temperature

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A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance - voltage and photocapacitance - light intensity measurements

10.1063/1.4848283 ◽

2013 ◽

Author(s):

Maciej Matys ◽

Boguslawa Adamowicz ◽

Tamotsu Hashizume

Keyword(s):

Light Intensity ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Intensity Measurements ◽

Capacitance Voltage ◽

Novel Method

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Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps)

Bulletin of Materials Science ◽

10.1007/s12034-017-1443-8 ◽

2017 ◽

Vol 40 (5) ◽

pp. 1035-1041 ◽

Cited By ~ 2

Author(s):

S Hlali ◽

N Hizem ◽

A Kalboussi

Keyword(s):

Semiconductor Devices ◽

Interface State ◽

State Density ◽

Interface State Density ◽

High K ◽

Capacitance Characteristics

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