Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures

2012 ◽  
Vol 100 (20) ◽  
pp. 203503 ◽  
Author(s):  
Piyas Samanta ◽  
Heng-Sheng Huang ◽  
Shuang-Yuan Chen ◽  
Tsung-Jian Tzeng ◽  
Mu-Chun Wang
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Positive Bias ◽  
Bias Stress ◽  
Semiconductor Structures ◽  
Recovery Mechanisms

Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

2012 ◽  
Vol 101 (13) ◽  
pp. 133505 ◽  
Author(s):  
Wen-Hung Lo ◽  
Ting-Chang Chang ◽  
Jyun-Yu Tsai ◽  
Chih-Hao Dai ◽  
Ching-En Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Positive Bias ◽  
Bias Stress ◽  
State Generation

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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