Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range

2019 ◽  
Vol 37 (3) ◽  
pp. 032903
Author(s):  
Fabian Triendl ◽  
Gernot Fleckl ◽  
Michael Schneider ◽  
Georg Pfusterschmied ◽  
Ulrich Schmid
Keyword(s):  
Metal Oxide ◽  
Wide Temperature Range ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Characterization Methods ◽  
Temperature Range ◽  
Semiconductor Structures

Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures

2012 ◽  
Vol 100 (20) ◽  
pp. 203503 ◽  
Author(s):  
Piyas Samanta ◽  
Heng-Sheng Huang ◽  
Shuang-Yuan Chen ◽  
Tsung-Jian Tzeng ◽  
Mu-Chun Wang
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Positive Bias ◽  
Bias Stress ◽  
Semiconductor Structures ◽  
Recovery Mechanisms

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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