Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement

2014 ◽  
Vol 104 (11) ◽  
pp. 113503 ◽  
Author(s):  
Szu-Han Ho ◽  
Ting-Chang Chang ◽  
Ying-Hsin Lu ◽  
Ching-En Chen ◽  
Jyun-Yu Tsai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Positive Bias ◽  
Input Output ◽  
Threshold Voltage Shift ◽  
Bias Stress

Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors

2011 ◽  
Vol 470 ◽  
pp. 218-223
Author(s):  
Nobuya Mori ◽  
Yoshinari Kamakura ◽  
Genaddy Mil'nikov ◽  
Hideki Minari
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Correction Term ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Analytical Expression

Quantum-transport simulations of current-voltage characteristics are performed in ultra-small double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a single attractive ion in the channel region. The ion induces a threshold voltage shift, whose origin is attributed to an ion-induced barrier lowering (IIBL). An analytical expression for the IIBL in ultra-small MOSFETs is derived. The analytical expression for the IIBL consists of two terms: a term related to the potential curvature at the potential top and a correction term due to the screening effects. The analytical model reproduces reasonably well the stimulated IIBL in the subthreshold region.

Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

2012 ◽  
Vol 101 (13) ◽  
pp. 133505 ◽  
Author(s):  
Wen-Hung Lo ◽  
Ting-Chang Chang ◽  
Jyun-Yu Tsai ◽  
Chih-Hao Dai ◽  
Ching-En Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Positive Bias ◽  
Bias Stress ◽  
State Generation

scholarly journals The gamma-ray irradiation sensitivity and dosimetric information instability of RADFET dosimeter

2013 ◽  
Vol 28 (4) ◽  
pp. 415-421 ◽  
Author(s):  
Milic Pejovic
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gamma Ray Irradiation

The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or pMOS dosimeters) with gate oxide thicknesses of 400 nm and 1 mm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift DVT on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between DVT and D during irradiation, so that the sensitivity can be defined as DVT/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150?C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150?C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also.

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