Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

2008 ◽  
Vol 93 (3) ◽  
pp. 032104 ◽  
Author(s):  
Hiroshi Matsubara ◽  
Takashi Sasada ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Metal Oxide ◽  
Thermal Oxidation ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Semiconductor Structures

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method

Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

2001 ◽  
Vol 693 ◽  
Author(s):  
R. Mehandru ◽  
B.P. Gila ◽  
J. Kim ◽  
J.W. Johnson ◽  
K.P. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Interface Trap Density ◽  
Interface Trap

AbstractGaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

2000 ◽  
Vol 77 (22) ◽  
pp. 3601-3603 ◽  
Author(s):  
Gilyong Chung ◽  
Chin Che Tin ◽  
John R. Williams ◽  
K. McDonald ◽  
M. Di Ventra ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap

Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide

2001 ◽  
Vol 693 ◽  
Author(s):  
J. Kim ◽  
B. P. Gila ◽  
R. Mehandru ◽  
J.W. Johnson ◽  
J. H. Shin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electron Cyclotron Resonance ◽  
Gate Oxide ◽  
State Density ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Conductance Method

AbstractGaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on MOCVD grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4 based wet-chemical etchant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid 1011 eV-1cm-2was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density and a slight lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher(6x1011 eV–1 cm-2 ) than at 25°C.

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