Effects of oxide‐trapped charges and interface trap generation in metal/oxide/semiconductor structures with ultradry oxides after Fowler–Nordheim stressing

1990 ◽  
Vol 67 (8) ◽  
pp. 3903-3905 ◽  
Author(s):  
Yasushiro Nishioka ◽  
Yuzuru Ohji ◽  
Ikuo Yoshida ◽  
Kiichiro Mukai ◽  
Takuo Sugano
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Semiconductor Structures

Interface trap generation and recovery mechanisms during and after positive bias stress in metal-oxide-semiconductor structures

2012 ◽  
Vol 100 (20) ◽  
pp. 203503 ◽  
Author(s):  
Piyas Samanta ◽  
Heng-Sheng Huang ◽  
Shuang-Yuan Chen ◽  
Tsung-Jian Tzeng ◽  
Mu-Chun Wang
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Positive Bias ◽  
Bias Stress ◽  
Semiconductor Structures ◽  
Recovery Mechanisms

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition
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