A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films

1999 ◽  
Vol 86 (4) ◽  
pp. 2095-2099 ◽  
Author(s):  
Tetsuo Endoh ◽  
Takao Chiba ◽  
Hiroshi Sakuraba ◽  
Markus Lenski ◽  
Fujio Masuoka
Keyword(s):  
Quantitative Analysis ◽  
Silicon Dioxide ◽  
Leakage Currents ◽  
Silicon Dioxide Films

Annealing of Fowler-Nordheim Stress-Induced Leakage Currents in Thin Silicon Dioxide Films

2000 ◽  
Vol 147 (12) ◽  
pp. 4676
Author(s):  
C. H. Ang ◽  
C. H. Ling ◽  
Z. Y. Cheng ◽  
S. J. Kim ◽  
B. J. Cho
Keyword(s):  
Silicon Dioxide ◽  
Leakage Currents ◽  
Silicon Dioxide Films ◽  
Thin Silicon

Measurements and Modelling of Thin Silicon Dioxide Films on Silicon

1989 ◽  
Author(s):  
A. Kalnitsky ◽  
S. P. Tay ◽  
J. P. Ellul ◽  
J. W. Andrews ◽  
E. A. Irene ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thin Silicon

Selection and characteristics of peptides that bind thermally grown silicon dioxide films

2005 ◽  
Vol 22 (5-6) ◽  
pp. 201-204 ◽  
Author(s):  
Edward Eteshola ◽  
Leonard J. Brillson ◽  
Stephen Craig Lee
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thermally Grown

Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method

2008 ◽  
Vol 47 (11) ◽  
pp. 8317-8320
Author(s):  
Takaaki Hirokane ◽  
Naoto Yoshii ◽  
Tatsuya Okazaki ◽  
Shinichi Urabe ◽  
Kazuo Nishimura ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Tunneling Current ◽  
Metal Gates ◽  
Silicon Dioxide Films
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