Analytical modeling of stress-induced leakage currents in 5.1–9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling

2000 ◽  
Vol 88 (9) ◽  
pp. 5238-5245 ◽  
Author(s):  
Markus Lenski ◽  
Tetsuo Endoh ◽  
Fujio Masuoka
Keyword(s):  
Silicon Dioxide ◽  
Analytical Modeling ◽  
Leakage Currents ◽  
Silicon Dioxide Films ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

Quantitative analysis of SILCs (stress-induced leakage currents) based on the inelastic trap-assisted tunneling model

1999 ◽  
Author(s):  
Shiro Kamohara ◽  
Yutaka Okuyama ◽  
Yukiko Manabe ◽  
Kosuke Okuyama ◽  
Katsuhiko Kubota ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Leakage Currents ◽  
Tunneling Model ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Annealing of Fowler-Nordheim Stress-Induced Leakage Currents in Thin Silicon Dioxide Films

2000 ◽  
Vol 147 (12) ◽  
pp. 4676
Author(s):  
C. H. Ang ◽  
C. H. Ling ◽  
Z. Y. Cheng ◽  
S. J. Kim ◽  
B. J. Cho
Keyword(s):  
Silicon Dioxide ◽  
Leakage Currents ◽  
Silicon Dioxide Films ◽  
Thin Silicon

A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films

1999 ◽  
Vol 86 (4) ◽  
pp. 2095-2099 ◽  
Author(s):  
Tetsuo Endoh ◽  
Takao Chiba ◽  
Hiroshi Sakuraba ◽  
Markus Lenski ◽  
Fujio Masuoka
Keyword(s):  
Quantitative Analysis ◽  
Silicon Dioxide ◽  
Leakage Currents ◽  
Silicon Dioxide Films
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