Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy

1999 ◽  
Vol 85 (10) ◽  
pp. 7374-7379 ◽  
Author(s):  
S. F. Yoon ◽  
K. W. Mah ◽  
H. Q. Zheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doped

Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy

1987 ◽  
Vol 50 (9) ◽  
pp. 516-518 ◽  
Author(s):  
J. Maguire ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
J. J. Harris
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doped

Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy

1998 ◽  
Vol 32 (9) ◽  
pp. 950-952 ◽  
Author(s):  
V. G. Mokerov ◽  
Yu. V. Fedorov ◽  
A. V. Guk ◽  
G. B. Galiev ◽  
V. A. Strakhov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doped

Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

1999 ◽  
Vol 204 (3) ◽  
pp. 275-281 ◽  
Author(s):  
K Radhakrishnan ◽  
H.Q Zheng ◽  
P.H Zhang ◽  
S.F Yoon ◽  
G.I Ng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doped

Evidence for donor‐gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures

1992 ◽  
Vol 61 (25) ◽  
pp. 3008-3010 ◽  
Author(s):  
S. A. McQuaid ◽  
R. C. Newman ◽  
M. Missous ◽  
S. O’Hagan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Gallium Vacancy ◽  
Silicon Doped

Properties of silicon-doped AlxGa1-xAs grown by molecular beam epitaxy

1983 ◽  
Vol 99 (4) ◽  
pp. 391-397 ◽  
Author(s):  
R. Fischer ◽  
T.J. Drummond ◽  
R.E. Thorne ◽  
W.G. Lyons ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doped
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