Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
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148

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Published By IEEE

0780363205

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On thallium incorporation in GaInTlAs layers grown on InP by low temperature molecular beam epitaxy

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850311 ◽

2002 ◽

Author(s):

F. Sanchez-Almazan ◽

M. Gendry ◽

P. Regreny ◽

E. Bergignat ◽

G. Grenet ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam

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Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850355 ◽

2002 ◽

Cited By ~ 1

Author(s):

Y.G. Hong ◽

H.P. Xin ◽

C.W. Tu

Keyword(s):

Short Period

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Analysis of high current effects on the performance of pnp InP-based heterojunction bipolar transistors

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850250 ◽

2002 ◽

Author(s):

S. Datta ◽

K.P. Roenker ◽

R.E. Peddenpohl ◽

M.M. Cahay

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current

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An improved performance 62.7 GHz low power divide-by-16 InP-based HBT circuit

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850277 ◽

2002 ◽

Cited By ~ 1

Author(s):

K.R. Elliott ◽

S. Thomas ◽

Y. Brown ◽

A. Kramer ◽

M. Sokolich ◽

...

Keyword(s):

Low Power ◽

Improved Performance

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Epilayer transfer for integration of III-V photodetectors onto a silicon platform using Au-Sn and Pd-Ge bonding

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850344 ◽

2002 ◽

Cited By ~ 1

Author(s):

T.D. Chen ◽

S.M. Spaziani ◽

K. Vaccaro ◽

J.P. Lorenzo ◽

N.M. Jokerst

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Growth over grating in 1.5 μm DFB lasers

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850317 ◽

2002 ◽

Author(s):

G.M. Ford ◽

C.W. Ebert ◽

J. Parks ◽

K.A. Grim-Bogdan

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High quality fully relaxed In/sub 0.65/Ga/sub 0.35/As layers grown on InP using seed membranes

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850261 ◽

2002 ◽

Author(s):

J.F. Damlencourt ◽

M. Boudaa ◽

J.L. Leclereq ◽

M. Gendry ◽

P. Regreny ◽

...

Keyword(s):

High Quality

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1.5 μm wavelength strain-compensated GaInAsP/InP wirelike lasers by CH/sub 4//H/sub 2/ reactive ion etching

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850343 ◽

2002 ◽

Author(s):

H. Yasumoto ◽

N. Nunoya ◽

H. Midorikawa ◽

S. Tamura ◽

S. Arai

Keyword(s):

Reactive Ion Etching ◽

Ion Etching

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2D simulations of InGaAs/InAlAs/InP HEMTs with asymmetrical gate recess

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850241 ◽

2002 ◽

Cited By ~ 1

Author(s):

F. Robin ◽

O.J. Homan ◽

W. Bachtold

Keyword(s):

Gate Recess

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Long wavelength InGa(N)As/GaAs QW laser structures grown by MOVPE

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850354 ◽

2002 ◽

Author(s):

A. Mereuta ◽

S. Bouchoule ◽

I. Sagnes ◽

F. Alexandre ◽

G. Le Roux ◽

...

Keyword(s):

Long Wavelength

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Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

On thallium incorporation in GaInTlAs layers grown on InP by low temperature molecular beam epitaxy

Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice

Analysis of high current effects on the performance of pnp InP-based heterojunction bipolar transistors

An improved performance 62.7 GHz low power divide-by-16 InP-based HBT circuit

Epilayer transfer for integration of III-V photodetectors onto a silicon platform using Au-Sn and Pd-Ge bonding

Growth over grating in 1.5 μm DFB lasers

High quality fully relaxed In/sub 0.65/Ga/sub 0.35/As layers grown on InP using seed membranes

1.5 μm wavelength strain-compensated GaInAsP/InP wirelike lasers by CH/sub 4//H/sub 2/ reactive ion etching

2D simulations of InGaAs/InAlAs/InP HEMTs with asymmetrical gate recess

Long wavelength InGa(N)As/GaAs QW laser structures grown by MOVPE

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
Latest Publications