Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy

1987 ◽  
Vol 50 (9) ◽  
pp. 516-518 ◽  
Author(s):  
J. Maguire ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
J. J. Harris
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doped

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Germanium/gallium arsenide alloys grown by molecular‐beam epitaxy

1991 ◽  
Vol 69 (1) ◽  
pp. 226-236 ◽  
Author(s):  
R. J. Baird ◽  
H. Holloway ◽  
M. A. Tamor ◽  
M. D. Hurley ◽  
W. C. Vassell
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

1999 ◽  
Vol 33 (10) ◽  
pp. 1080-1083 ◽  
Author(s):  
A. E. Kunitsyn ◽  
V. V. Chaldyshev ◽  
S. P. Vul’ ◽  
V. V. Preobrazhenskii ◽  
M. A. Putyato ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Gallium Vacancy ◽  
Indium Doping
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