Evidence for donor‐gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures

1992 ◽  
Vol 61 (25) ◽  
pp. 3008-3010 ◽  
Author(s):  
S. A. McQuaid ◽  
R. C. Newman ◽  
M. Missous ◽  
S. O’Hagan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Gallium Vacancy ◽  
Silicon Doped

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

1999 ◽  
Vol 33 (10) ◽  
pp. 1080-1083 ◽  
Author(s):  
A. E. Kunitsyn ◽  
V. V. Chaldyshev ◽  
S. P. Vul’ ◽  
V. V. Preobrazhenskii ◽  
M. A. Putyato ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Gallium Vacancy ◽  
Indium Doping

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

1996 ◽  
Vol 69 (3) ◽  
pp. 397-399 ◽  
Author(s):  
Albert Chin ◽  
W. J. Chen ◽  
F. Ganikhanov ◽  
G.‐R. Lin ◽  
Jia‐Min Shieh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam

0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures

1994 ◽  
Vol 49 (7) ◽  
pp. 4689-4694 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Robinson ◽  
J. R. Sizelove ◽  
C. E. Stutz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

1997 ◽  
Vol 40 (2) ◽  
pp. 214-218
Author(s):  
Nuofu Chen ◽  
Hongjia He ◽  
Yutian Wang ◽  
Lanying Lin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Low Temperatures ◽  
Molecular Beam

Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Arscott ◽  
M. Missous ◽  
L. Dobaczewski ◽  
P. C. Harness ◽  
D. K. Maude ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electron Concentration ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Wave Functions ◽  
Potential Well ◽  
Electronic Wave ◽  
Hall Measurements ◽  
Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

Forward‐bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures

1993 ◽  
Vol 63 (17) ◽  
pp. 2408-2410 ◽  
Author(s):  
H. Jorke ◽  
H. Kibbel ◽  
K. Strohm ◽  
E. Kasper
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Forward Bias

Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy

1992 ◽  
Vol 60 (24) ◽  
pp. 3007-3009 ◽  
Author(s):  
R. Enrique Viturro ◽  
Michael R. Melloch ◽  
Jerry M. Woodall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Optical Emission ◽  
Emission Properties
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