Photoluminescence and raman scattering characterization of silicon-doped In0.52Al0.48As grown on InP (100) substrates by molecular beam epitaxy

1996 ◽  
Vol 25 (9) ◽  
pp. 1458-1462 ◽  
Author(s):  
S. F. Yoon ◽  
Y. B. Miao ◽  
K. Radhakrishnan ◽  
S. Swaminathan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Silicon Doped

Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

1999 ◽  
Vol 204 (3) ◽  
pp. 275-281 ◽  
Author(s):  
K Radhakrishnan ◽  
H.Q Zheng ◽  
P.H Zhang ◽  
S.F Yoon ◽  
G.I Ng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doped

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area
Sign in / Sign up

Export Citation Format

Share Document