ChemInform Abstract: EFFECT OF GROUP V/III FLUX RATIO ON LIGHTLY SILICON-DOPED ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) GROWN BY MOLECULAR BEAM EPITAXY

1985 ◽  
Vol 16 (12) ◽  
Author(s):  
Y. NOMURA ◽  
M. MANNOH ◽  
M. MIHARA ◽  
S. NARITSUKA ◽  
K. YAMANAKA ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Gallium Arsenide ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Silicon Doped

Effect of group V/III flux ratio on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxy

1986 ◽  
Vol 49 (13) ◽  
pp. 788-790 ◽  
Author(s):  
T. Hayakawa ◽  
M. Kondo ◽  
T. Suyama ◽  
K. Takahashi ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Electron Traps

Effect of Group V/III Flux Ratio on Lightly Si‐Doped Al x Ga1 − x As Grown by Molecular Beam Epitaxy

1984 ◽  
Vol 131 (11) ◽  
pp. 2630-2633 ◽  
Author(s):  
Y. Nomura ◽  
M. Mannoh ◽  
M. Mihara ◽  
S. Naritsuka ◽  
K. Yamanaka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Si Doped

Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy

1988 ◽  
Vol 52 (4) ◽  
pp. 252-254 ◽  
Author(s):  
T. Hayakawa ◽  
K. Takahashi ◽  
T. Suyama ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Flux Ratio ◽  
Group V

Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy

1987 ◽  
Vol 50 (9) ◽  
pp. 516-518 ◽  
Author(s):  
J. Maguire ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
J. J. Harris
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doped

scholarly journals Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

2016 ◽  
Vol 24 (1) ◽  
Author(s):  
D. Benyahia ◽  
Ł. Kubiszyn ◽  
K. Michalczewski ◽  
A. Kębłowski ◽  
P. Martyniuk ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Flux Ratio ◽  
X Ray Diffraction ◽  
Group V

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

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