Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth

1998 ◽  
Vol 84 (2) ◽  
pp. 690-703 ◽  
Author(s):  
Joseph S. Melinger ◽  
Dale McMorrow ◽  
A. B. Campbell ◽  
Stephen Buchner ◽  
Lan Hu Tran ◽  
...  
Keyword(s):  
Penetration Depth ◽  
Pulsed Laser ◽  
Charge Collection ◽  
Single Event Upset ◽  
Single Event ◽  
Optical Penetration Depth

Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser

1994 ◽  
Vol 41 (6) ◽  
pp. 2195-2202 ◽  
Author(s):  
S. Buchner ◽  
J.B. Langworthy ◽  
W.J. Stapor ◽  
A.B. Campbell ◽  
S. Rivet
Keyword(s):  
Spatial Dependence ◽  
Pulsed Laser ◽  
Single Event Upset ◽  
Single Event

Fundamentals of the Pulsed Laser Technique for Single-Event Upset Testing

2007 ◽  
pp. 121-141 ◽  
Author(s):  
Pascal Fouillat ◽  
Vincent Pouget ◽  
Dale McMorrow ◽  
Frédéric Darracq ◽  
Stephen Buchner ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Single Event Upset ◽  
Single Event ◽  
Laser Technique

Charge-Collection and Single-Event Upset Measurements at the ISIS Neutron Source

2008 ◽  
Vol 55 (4) ◽  
pp. 2126-2132 ◽  
Author(s):  
Simon Platt ◽  
ZoltÁn Torok ◽  
Chris D. Frost ◽  
Stuart Ansell
Keyword(s):  
Neutron Source ◽  
Charge Collection ◽  
Single Event Upset ◽  
Single Event

Single event upset and charge collection measurements using high energy protons and neutrons

1994 ◽  
Vol 41 (6) ◽  
pp. 2203-2209 ◽  
Author(s):  
E. Normand ◽  
D.L. Oberg ◽  
J.L. Wert ◽  
J.D. Ness ◽  
P.P. Majewski ◽  
...  
Keyword(s):  
High Energy ◽  
Charge Collection ◽  
Single Event Upset ◽  
Single Event ◽  
Protons And Neutrons

A Strategy to Mitigate Single Event Upset in 14 nm CMOS Bulk FinFET Technology

2021 ◽  
Author(s):  
Li Dong-Qing ◽  
Liu Tian-Qi ◽  
Zhao Pei-Xiong ◽  
Wu Zhen-Yu ◽  
Wang Tie-Shan ◽  
...  
Keyword(s):  
Cross Section ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Charge Collection ◽  
Single Event Upset ◽  
Single Event ◽  
Feature Size ◽  
Heavy Ion Irradiation ◽  
Scaling Down ◽  
Tcad Simulations

Abstract 3D TCAD simulations demonstrated that reducing the distance between the well boundary and NMOS or PMOS can mitigate the cross section of Single Event Upset (SEU) in 14 nm CMOS bulk FinFET technology. The competition of charge collection between well boundary and sensitive nodes, the enhanced restore currents and the change of bipolar effect are responsible for the decrease of SEU cross section. Different from Dual-interlock cells (DICE) design, under the presence of enough taps to ensure the rapid recovery of well potential, this approach is more effective under heavy ion irradiation of higher LET. Besides, the feasibility of this method and its effectiveness with feature size scaling down are discussed.

Comparison of single-event upset generated by heavy ion and pulsed laser

2017 ◽  
Vol 60 (7) ◽  
Author(s):  
Bin Liang ◽  
Ruiqiang Song ◽  
Jianwei Han ◽  
Yaqing Chi ◽  
Rui Chen ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Heavy Ion ◽  
Single Event Upset ◽  
Single Event
Sign in / Sign up

Export Citation Format

Share Document