Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser

1994 ◽  
Vol 41 (6) ◽  
pp. 2195-2202 ◽  
Author(s):  
S. Buchner ◽  
J.B. Langworthy ◽  
W.J. Stapor ◽  
A.B. Campbell ◽  
S. Rivet
Keyword(s):  
Spatial Dependence ◽  
Pulsed Laser ◽  
Single Event Upset ◽  
Single Event

Fundamentals of the Pulsed Laser Technique for Single-Event Upset Testing

2007 ◽  
pp. 121-141 ◽  
Author(s):  
Pascal Fouillat ◽  
Vincent Pouget ◽  
Dale McMorrow ◽  
Frédéric Darracq ◽  
Stephen Buchner ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Single Event Upset ◽  
Single Event ◽  
Laser Technique

Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth

1998 ◽  
Vol 84 (2) ◽  
pp. 690-703 ◽  
Author(s):  
Joseph S. Melinger ◽  
Dale McMorrow ◽  
A. B. Campbell ◽  
Stephen Buchner ◽  
Lan Hu Tran ◽  
...  
Keyword(s):  
Penetration Depth ◽  
Pulsed Laser ◽  
Charge Collection ◽  
Single Event Upset ◽  
Single Event ◽  
Optical Penetration Depth

Comparison of single-event upset generated by heavy ion and pulsed laser

2017 ◽  
Vol 60 (7) ◽  
Author(s):  
Bin Liang ◽  
Ruiqiang Song ◽  
Jianwei Han ◽  
Yaqing Chi ◽  
Rui Chen ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Heavy Ion ◽  
Single Event Upset ◽  
Single Event

VLSI for Space Applications—Single Event Effect Investigation and Optical Analysis on an Integrated Laser Platform

2017 ◽  
Author(s):  
Samuel Chef ◽  
Chung Tah Chua ◽  
Yu Wen Siah ◽  
Philippe Perdu ◽  
Chee Lip Gan ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Single Event ◽  
Optical Analysis ◽  
Space Applications ◽  
Laser Probing ◽  
Single Event Effect ◽  
Evaluation Time ◽  
Black Boxes ◽  
System Use ◽  
First Time

Abstract Today’s VLSI devices are neither designed nor manufactured for space applications in which single event effects (SEE) issues are common. In addition, very little information about the internal schematic and usually nothing about the layout or netlist is available. Thus, they are practically black boxes for satellite manufacturers. On the other hand, such devices are crucial in driving the performance of spacecraft, especially smaller satellites. The only way to efficiently manage SEE in VLSI devices is to localize sensitive areas of the die, analyze the regions of interest, study potential mitigation techniques, and evaluate their efficiency. For the first time, all these activities can be performed using the same tool with a single test setup that enables a very efficient iterative process that reduce the evaluation time from months to days. In this paper, we will present the integration of a pulsed laser for SEE study into a laser probing, laser stimulation, and emission microscope system. Use of this system will be demonstrated on a commercial 8 bit microcontroller.

SEU (Single Event Upset) Vulnerability of the Zilog Z-80 and NSC-800 Microprocessors,

1986 ◽  
Author(s):  
R. Koga ◽  
W. A. Kolasinski ◽  
C. King ◽  
J. Cusick
Keyword(s):  
Single Event Upset ◽  
Single Event

Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor

2021 ◽  
Author(s):  
Shuting Shi ◽  
Rui Chen ◽  
Rui Liu ◽  
Mo Chen ◽  
Chen Shen ◽  
...  
Keyword(s):  
Single Event Upset ◽  
Single Event ◽  
Arm Processor ◽  
28 Nm
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