Fowler–Nordheim tunneling current oscillations at metal/oxide/Si interfaces

K. J. Hebert; E. A. Irene

doi:10.1063/1.365811

Fowler–Nordheim tunneling current oscillations at metal/oxide/Si interfaces

Journal of Applied Physics ◽

10.1063/1.365811 ◽

1997 ◽

Vol 82 (1) ◽

pp. 291-296 ◽

Cited By ~ 24

Author(s):

K. J. Hebert ◽

E. A. Irene

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Current Oscillations ◽

Nordheim Tunneling

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Thickness measurements for ultrathin-film insulator metal–oxide–semiconductor structures using Fowler–Nordheim tunneling current oscillations

Journal of Applied Physics ◽

10.1063/1.1321781 ◽

2000 ◽

Vol 88 (11) ◽

pp. 6560-6563 ◽

Cited By ~ 14

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Ultrathin Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Current Oscillations ◽

Thickness Measurements ◽

Nordheim Tunneling

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Measurements of the widths of transition regions at Si–SiO2 interfaces in metal-oxide–semiconductor structures from quantum oscillations in Fowler–Nordheim tunneling current

Solid State Communications ◽

10.1016/s0038-1098(01)00221-6 ◽

2001 ◽

Vol 119 (2) ◽

pp. 67-71 ◽

Cited By ~ 1

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Oscillations ◽

Semiconductor Structures ◽

Nordheim Tunneling

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Study of Fowler–Nordheim tunneling current oscillations of thin insulator MOS structure by wave interference method

Solid-State Electronics ◽

10.1016/s0038-1101(00)00089-7 ◽

2000 ◽

Vol 44 (8) ◽

pp. 1501-1506 ◽

Cited By ~ 14

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Tunneling Current ◽

Interference Method ◽

Mos Structure ◽

Wave Interference ◽

Current Oscillations ◽

Nordheim Tunneling

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Si/SiO2 interface roughness study using Fowler–Nordheim tunneling current oscillations

Journal of Applied Physics ◽

10.1063/1.371993 ◽

2000 ◽

Vol 87 (3) ◽

pp. 1159-1164 ◽

Cited By ~ 17

Author(s):

L. Lai ◽

E. A. Irene

Keyword(s):

Tunneling Current ◽

Interface Roughness ◽

Current Oscillations ◽

Nordheim Tunneling

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Fowler–Nordheim tunneling current in a Mg/polycrystalline Si oxide/n+polycrystalline Si metal‐oxide‐silicon structure

Applied Physics Letters ◽

10.1063/1.110414 ◽

1993 ◽

Vol 63 (19) ◽

pp. 2667-2669 ◽

Cited By ~ 3

Author(s):

Sik On Kong ◽

Chee Yee Kwok

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Silicon Structure ◽

Metal Oxide Silicon ◽

Nordheim Tunneling

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An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier

Journal of Applied Physics ◽

10.1063/1.366535 ◽

1997 ◽

Vol 82 (3) ◽

pp. 1262-1265 ◽

Cited By ~ 6

Author(s):

E. Miranda ◽

G. Redin ◽

A. Faigón

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Effective Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Approach ◽

Nordheim Tunneling

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Interface State Generation in p-Type Si Metal/ Oxide/ Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1315 ◽

1995 ◽

Vol 34 (Part 2, No. 10B) ◽

pp. L1315-L1317 ◽

Cited By ~ 2

Author(s):

Masao Inoue ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Stress ◽

State Generation ◽

P Type ◽

Nordheim Tunneling

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The effect of transition region on the direct tunneling current and Fowler–Nordheim tunneling current oscillations in ultrathin MOS structures

Microelectronics Reliability ◽

10.1016/s0026-2714(01)00247-5 ◽

2002 ◽

Vol 42 (2) ◽

pp. 175-181 ◽

Cited By ~ 3

Author(s):

Lingfeng Mao ◽

Heqiu Zhang ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Transition Region ◽

Tunneling Current ◽

Direct Tunneling ◽

Current Oscillations ◽

Direct Tunneling Current ◽

Mos Structures ◽

Nordheim Tunneling

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Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler–Nordheim tunneling current oscillations in ultrathin MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(01)00144-7 ◽

2001 ◽

Vol 45 (7) ◽

pp. 1081-1084 ◽

Cited By ~ 2

Author(s):

Lingfeng Mao ◽

Heqiu Zhang ◽

Jianlin Wei ◽

Fuchen Mu ◽

Changhua Tan ◽

...

Keyword(s):

Numerical Analysis ◽

Tunneling Current ◽

Interface Roughness ◽

Current Oscillations ◽

Nordheim Tunneling

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STUDY OF FOWLER-NORDHEIM TUNNELING CURRENT OSCILLATIONS IN ULTRA-THIN INSULATOR MOS STRUCTURE BY INTERFERENCE METHOD

Acta Physica Sinica ◽

10.7498/aps.49.974 ◽

2000 ◽

Vol 49 (5) ◽

pp. 974

Author(s):

MAO LING-FENG ◽

TAN CHANG-HUA ◽

XU MING-ZHEN ◽

WEI JIN-LIN

Keyword(s):

Tunneling Current ◽

Interference Method ◽

Mos Structure ◽

Current Oscillations ◽

Nordheim Tunneling

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