An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier

E. Miranda; G. Redin; A. Faigón

doi:10.1063/1.366535

An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier

Journal of Applied Physics ◽

10.1063/1.366535 ◽

1997 ◽

Vol 82 (3) ◽

pp. 1262-1265 ◽

Cited By ~ 6

Author(s):

E. Miranda ◽

G. Redin ◽

A. Faigón

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Effective Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Approach ◽

Nordheim Tunneling

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Measurements of the widths of transition regions at Si–SiO2 interfaces in metal-oxide–semiconductor structures from quantum oscillations in Fowler–Nordheim tunneling current

Solid State Communications ◽

10.1016/s0038-1098(01)00221-6 ◽

2001 ◽

Vol 119 (2) ◽

pp. 67-71 ◽

Cited By ~ 1

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Oscillations ◽

Semiconductor Structures ◽

Nordheim Tunneling

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Interface State Generation in p-Type Si Metal/ Oxide/ Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1315 ◽

1995 ◽

Vol 34 (Part 2, No. 10B) ◽

pp. L1315-L1317 ◽

Cited By ~ 2

Author(s):

Masao Inoue ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Stress ◽

State Generation ◽

P Type ◽

Nordheim Tunneling

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Thickness measurements for ultrathin-film insulator metal–oxide–semiconductor structures using Fowler–Nordheim tunneling current oscillations

Journal of Applied Physics ◽

10.1063/1.1321781 ◽

2000 ◽

Vol 88 (11) ◽

pp. 6560-6563 ◽

Cited By ~ 14

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Ultrathin Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Current Oscillations ◽

Thickness Measurements ◽

Nordheim Tunneling

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Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Solid-State Electronics ◽

10.1016/j.sse.2016.04.007 ◽

2016 ◽

Vol 122 ◽

pp. 56-63 ◽

Cited By ~ 9

Author(s):

S. Toumi ◽

Z. Ouennoughi ◽

K.C. Strenger ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Optimization Method ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Nordheim Tunneling ◽

Metal Oxide Semiconductor Structure

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Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4898009 ◽

2014 ◽

Vol 105 (14) ◽

pp. 142108 ◽

Cited By ~ 35

Author(s):

Patrick Fiorenza ◽

Alessia Frazzetto ◽

Alfio Guarnera ◽

Mario Saggio ◽

Fabrizio Roccaforte

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nordheim Tunneling

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Two components of tunneling current in metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.94145 ◽

1983 ◽

Vol 43 (1) ◽

pp. 106-108 ◽

Cited By ~ 66

Author(s):

B. Eitan ◽

A. Kolodny

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Cited By ~ 16

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

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Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability

Journal of Applied Physics ◽

10.1063/1.357438 ◽

1994 ◽

Vol 76 (6) ◽

pp. 3695-3700 ◽

Cited By ~ 100

Author(s):

Klaus F. Schuegraf ◽

Chenming Hu

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Substrate Current ◽

Effect Transistor ◽

Nordheim Tunneling

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Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(97)00184-1 ◽

1997 ◽

Vol 216 ◽

pp. 174-179 ◽

Cited By ~ 1

Author(s):

G. Yard ◽

A. Meinertzhagen ◽

C. Petit ◽

M. Jourdain ◽

F. Mondon

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunneling Injection ◽

Nordheim Tunneling

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Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2348 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2348-2352 ◽

Cited By ~ 62

Author(s):

Shin-ichi Takagi ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling Current

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