Si/SiO2 interface roughness study using Fowler–Nordheim tunneling current oscillations

2000 ◽  
Vol 87 (3) ◽  
pp. 1159-1164 ◽  
Author(s):  
L. Lai ◽  
E. A. Irene
Keyword(s):  
Tunneling Current ◽  
Interface Roughness ◽  
Current Oscillations ◽  
Nordheim Tunneling

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Microroughness at the Si/SiO2 Interface from Pre-Oxidation Annealing, Measured Using Quantum Oscillations in Fowler-Nordheim Tunneling Currents

1992 ◽  
Vol 280 ◽  
Author(s):  
J. C. Poler ◽  
K. K. McKay ◽  
E. A. Irene
Keyword(s):  
Gate Dielectrics ◽  
Interface Roughness ◽  
Quantum Oscillation ◽  
Interfacial Region ◽  
Mos Capacitors ◽  
Quantum Oscillations ◽  
High Temperature Anneal ◽  
Afm Imaging ◽  
Tunneling Currents ◽  
Nordheim Tunneling

ABSTRACTAs design rules shrink to conform with ULSI device dimensions, gate dielectrics for MOSFET structures are required to be scaled to even thinner proportions. Upon scaling the gate oxides below ∼60Å some properties of the device, such as interface roughness, that are negligible for thicker films become critical and must be evaluated. Microroughness at the interface of ultrathin MOS capacitors has been shown to degrade these devices.We are studying the interfacial region of ∼50Å SiO2 on Si using the quantum oscillations in Fowler-Nordheim tunneling currents. The oscillations are sensitive to the electron potential and abruptness of the film and its interfaces. In particular, inelastic scattering and/or thickness inhomogeneities in the film will reduce the amplitude of the oscillations. We are using the amplitude of the oscillations to examine the degree of microroughness at the interface that results from a pre-oxidation high temperature anneal in an inert ambient containing various amounts of H2O. Preliminary AFM imaging has shown correlations supporting our microroughness interpretation of the quantum oscillation amplitudes.

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