scholarly journals STUDY OF FOWLER-NORDHEIM TUNNELING CURRENT OSCILLATIONS IN ULTRA-THIN INSULATOR MOS STRUCTURE BY INTERFERENCE METHOD

2000 ◽  
Vol 49 (5) ◽  
pp. 974
Author(s):  
MAO LING-FENG ◽  
TAN CHANG-HUA ◽  
XU MING-ZHEN ◽  
WEI JIN-LIN
Keyword(s):  
Tunneling Current ◽  
Interference Method ◽  
Mos Structure ◽  
Current Oscillations ◽  
Nordheim Tunneling

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

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