Fowler–Nordheim tunneling current in a Mg/polycrystalline Si oxide/n+polycrystalline Si metal‐oxide‐silicon structure

Sik On Kong; Chee Yee Kwok

doi:10.1063/1.110414

Fowler–Nordheim tunneling current in a Mg/polycrystalline Si oxide/n+polycrystalline Si metal‐oxide‐silicon structure

Applied Physics Letters ◽

10.1063/1.110414 ◽

1993 ◽

Vol 63 (19) ◽

pp. 2667-2669 ◽

Cited By ~ 3

Author(s):

Sik On Kong ◽

Chee Yee Kwok

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Silicon Structure ◽

Metal Oxide Silicon ◽

Nordheim Tunneling

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Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action

Optics Letters ◽

10.1364/ol.27.000713 ◽

2002 ◽

Vol 27 (9) ◽

pp. 713 ◽

Cited By ~ 14

Author(s):

Ching-Fuh Lin ◽

Peng-Fei Chung ◽

Miin-Jang Chen ◽

Wei-Fang Su

Keyword(s):

Metal Oxide ◽

Band Edge ◽

Silicon Structure ◽

Metal Oxide Silicon

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State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO2Films in a Metal–Oxide–Silicon Structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.110203 ◽

2013 ◽

Vol 52 (11R) ◽

pp. 110203 ◽

Cited By ~ 1

Author(s):

Takeshi Ishida ◽

Naoki Tega ◽

Yuki Mori ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

State Transition ◽

Silicon Structure ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Metal Oxide Silicon ◽

Stress Induced Leakage Current

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The Influence of Surface on Hole Mobility in Metal-Oxide-Silicon Structure

Japanese Journal of Applied Physics ◽

10.7567/jjaps.2s2.363 ◽

1974 ◽

Vol 13 (S2) ◽

pp. 363 ◽

Cited By ~ 4

Author(s):

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Hole Mobility ◽

Silicon Structure ◽

Metal Oxide Silicon

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Transformation of a metal-oxide-silicon structure into a resonance-tunneling structure with quasi-zero-dimensional quantum states

Semiconductors ◽

10.1134/1.1187804 ◽

1999 ◽

Vol 33 (8) ◽

pp. 883-885 ◽

Cited By ~ 5

Author(s):

G. G. Kareva

Keyword(s):

Metal Oxide ◽

Quantum States ◽

Silicon Structure ◽

Resonance Tunneling ◽

Metal Oxide Silicon

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Measurements of the widths of transition regions at Si–SiO2 interfaces in metal-oxide–semiconductor structures from quantum oscillations in Fowler–Nordheim tunneling current

Solid State Communications ◽

10.1016/s0038-1098(01)00221-6 ◽

2001 ◽

Vol 119 (2) ◽

pp. 67-71 ◽

Cited By ~ 1

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Oscillations ◽

Semiconductor Structures ◽

Nordheim Tunneling

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Oxide trapping under spatially variable oxide electric field in the metal‐oxide‐silicon structure

Applied Physics Letters ◽

10.1063/1.98423 ◽

1987 ◽

Vol 51 (6) ◽

pp. 463-465 ◽

Cited By ~ 14

Author(s):

E. Avni ◽

J. Shappir

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Silicon Structure ◽

Metal Oxide Silicon

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Fowler–Nordheim tunneling current oscillations at metal/oxide/Si interfaces

Journal of Applied Physics ◽

10.1063/1.365811 ◽

1997 ◽

Vol 82 (1) ◽

pp. 291-296 ◽

Cited By ~ 24

Author(s):

K. J. Hebert ◽

E. A. Irene

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Current Oscillations ◽

Nordheim Tunneling

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An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier

Journal of Applied Physics ◽

10.1063/1.366535 ◽

1997 ◽

Vol 82 (3) ◽

pp. 1262-1265 ◽

Cited By ~ 6

Author(s):

E. Miranda ◽

G. Redin ◽

A. Faigón

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Effective Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Approach ◽

Nordheim Tunneling

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Interface State Generation in p-Type Si Metal/ Oxide/ Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1315 ◽

1995 ◽

Vol 34 (Part 2, No. 10B) ◽

pp. L1315-L1317 ◽

Cited By ~ 2

Author(s):

Masao Inoue ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Stress ◽

State Generation ◽

P Type ◽

Nordheim Tunneling

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Frequency response of bulk traps in the metal-oxide-silicon structure under strong-inversion conditions

Microelectronics Reliability ◽

10.1016/0026-2714(77)90854-x ◽

1977 ◽

Vol 16 (3) ◽

pp. 217

Keyword(s):

Metal Oxide ◽

Frequency Response ◽

Silicon Structure ◽

Strong Inversion ◽

Metal Oxide Silicon

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