Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

2011 ◽  
Vol 99 (13) ◽  
pp. 132907 ◽  
Author(s):  
Yukio Fukuda ◽  
Hiroshi Okamoto ◽  
Takuro Iwasaki ◽  
Yohei Otani ◽  
Toshiro Ono
Keyword(s):  
Low Temperature ◽  
Cyclotron Resonance ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
High Quality ◽  
Electron Cyclotron Resonance Plasma ◽  
Plasma Nitridation ◽  
P Type ◽  
Resonance Plasma

Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma

1997 ◽  
Vol 36 (Part 2, No. 12B) ◽  
pp. L1692-L1694 ◽  
Author(s):  
Da-Wei Gao ◽  
Yasuhiro Kashiwazaki ◽  
Katsunori Muraoka ◽  
Hiroshi Nakashima ◽  
Katsuhiko Furukawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Silicon Oxynitride ◽  
High Quality ◽  
Electron Cyclotron Resonance Plasma ◽  
Oxynitride Film ◽  
Resonance Plasma

Low Temperature Fabrication of AlN/Ge Structure Using Electron Cyclotron Resonance Plasma Nitridation

2019 ◽  
Vol 25 (6) ◽  
pp. 301-306
Author(s):  
Jun Kishiwada ◽  
Nurbaizura Mohamed ◽  
Yusuke Oniki ◽  
Yoshitaka Iwasaki ◽  
Tomo Ueno
Keyword(s):  
Low Temperature ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Plasma Nitridation ◽  
Resonance Plasma
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