Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

A. Weber; R. Poeckelmann; C.‐P. Klages

doi:10.1063/1.114847

Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

Applied Physics Letters ◽

10.1063/1.114847 ◽

1995 ◽

Vol 67 (20) ◽

pp. 2934-2935 ◽

Cited By ~ 19

Author(s):

A. Weber ◽

R. Poeckelmann ◽

C.‐P. Klages

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Process ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Cited By ~ 20

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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Electron cyclotron resonance plasma process for InP passivation

Applied Physics Letters ◽

10.1063/1.109797 ◽

1993 ◽

Vol 63 (8) ◽

pp. 1113-1115 ◽

Cited By ~ 14

Author(s):

Y. Z. Hu ◽

M. Li ◽

Y. Wang ◽

E. A. Irene ◽

M. Rowe ◽

...

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Process ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Evaluation of the Electron Cyclotron Resonance Plasma Process Using a Microwave Twin-Lead Line Probe

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l1767 ◽

1991 ◽

Vol 30 (Part 2, No. 10A) ◽

pp. L1767-L1769 ◽

Cited By ~ 2

Author(s):

Hiroshi Nishimura ◽

Seitaro Matsuo

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Process ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma ◽

Lead Line

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Electron cyclotron resonance plasma process technology.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.54.1877 ◽

1988 ◽

Vol 54 (10) ◽

pp. 1877-1880

Author(s):

Seitero MIATSUO

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Process ◽

Process Technology ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Growth of cubic boron nitride and boron-carbon-nitrogen coatings using N-trimethylborazine in an electron cyclotron resonance plasma process

Diamond and Related Materials ◽

10.1016/0925-9635(93)90053-5 ◽

1993 ◽

Vol 2 (2-4) ◽

pp. 201-206 ◽

Cited By ~ 62

Author(s):

A. Weber ◽

U. Bringmann ◽

R. Nikulski ◽

C.-P. Klages

Keyword(s):

Boron Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Cubic Boron Nitride ◽

Electron Cyclotron ◽

Plasma Process ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma ◽

Boron Carbon

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Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

Applied Physics Letters ◽

10.1063/1.3647621 ◽

2011 ◽

Vol 99 (13) ◽

pp. 132907 ◽

Cited By ~ 12

Author(s):

Yukio Fukuda ◽

Hiroshi Okamoto ◽

Takuro Iwasaki ◽

Yohei Otani ◽

Toshiro Ono

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Surface Passivation ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Nitridation ◽

P Type ◽

Resonance Plasma

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Deposition of TiN using tetrakis(dimethylamido)‐titanium in an electron‐cyclotron‐resonance plasma process

Applied Physics Letters ◽

10.1063/1.110059 ◽

1993 ◽

Vol 63 (3) ◽

pp. 325-327 ◽

Cited By ~ 16

Author(s):

A. Weber ◽

R. Nikulski ◽

C.‐P. Klages

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Process ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l765 ◽

2004 ◽

Vol 43 (No. 6B) ◽

pp. L765-L767 ◽

Cited By ~ 11

Author(s):

Kunio Saito ◽

Yoshito Jin ◽

Toshiro Ono ◽

Masaru Shimada

Keyword(s):

Activation Energy ◽

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Stream ◽

High Quality ◽

Silicon Oxidation ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.2834 ◽

2000 ◽

Vol 39 (Part 1, No. 5A) ◽

pp. 2834-2838 ◽

Cited By ~ 4

Author(s):

Junsi Gao ◽

Hiroshi Nakashima ◽

Junli Wang ◽

Kanako Iwanaga ◽

Hideharu Nakashima ◽

...

Keyword(s):

Epitaxial Growth ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Discharge Condition ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Dc Bias ◽

Resonance Plasma

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Low-Temperature Formation of High-Quality $ \hbox{GeO}_{2}$ Interlayer for High-$\kappa$ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2035030 ◽

2010 ◽

Vol 57 (1) ◽

pp. 282-287 ◽

Cited By ~ 36

Author(s):

Yukio Fukuda ◽

Yuya Yazaki ◽

Yohei Otani ◽

Tetsuya Sato ◽

Hiroshi Toyota ◽

...

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Gate Dielectrics ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Techniques ◽

Resonance Plasma

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