Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition

1995 ◽  
Vol 67 (7) ◽  
pp. 971-973 ◽  
Author(s):  
J. L. Rogers ◽  
P. S. Andry ◽  
W. J. Varhue ◽  
P. McGaughnea ◽  
E. Adams ◽  
...  
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