Anodization behavior of Al, and physical and electrical characterization of its oxide films

1996 ◽  
Vol 80 (10) ◽  
pp. 5828-5836 ◽  
Author(s):  
Kiyoshi Ozawa ◽  
Teiji Majima
Keyword(s):  
Oxide Films ◽  
Electrical Characterization

Deposition and electrical characterization of hafnium oxide films on silicon

2008 ◽  
Vol 5 (12) ◽  
pp. 3720-3723 ◽  
Author(s):  
E. Verrelli ◽  
D. Tsoukalas ◽  
D. Kouvatsos
Keyword(s):  
Hafnium Oxide ◽  
Oxide Films ◽  
Electrical Characterization

scholarly journals Electrical characterization of low temperature deposited oxide films on ZnO/n-Si substrate

2003 ◽  
Vol 26 (7) ◽  
pp. 693-697 ◽  
Author(s):  
S. K. Nandi ◽  
S. Chatterjee ◽  
S. K. Samanta ◽  
P. K. Bose ◽  
C. K. Maiti
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Electrical Characterization ◽  
Si Substrate

Electrical characterization of hydrogenated amorphous silicon oxide films

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KB11 ◽  
Author(s):  
Takashi Itoh ◽  
Ryuichi Katayama ◽  
Koki Yamakawa ◽  
Kento Matsui ◽  
Masaru Saito ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Hydrogenated Amorphous Silicon ◽  
Electrical Characterization ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

Structural and Electrical Characterization of Undoped Poly-Si Oxides

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Sakamoto ◽  
H. Tokioka ◽  
S. Takanabe ◽  
T. Kubota ◽  
Y. Niwano ◽  
...  
Keyword(s):  
Leakage Current ◽  
Crystallization Temperature ◽  
Solid Phase ◽  
Oxide Films ◽  
Electrical Characterization ◽  
Oxide Interface ◽  
Solid Phase Crystallization ◽  
Oxide Layers ◽  
Si Films

ABSTRACTWe evaluated structural and electrical characteristics of undoped poly-Si oxide films. Poly-Si films made by solid phase crystallization at 600-900°C from undoped amorphous Si films were oxidized to form oxide layers of 140nm thickness. We observed protuberances on the surface of poly-Si layers after oxidation. Poly-Si oxide layers also generated protuberances above the protuberances of poly-Si films. The number of protuberances per unit area is larger in the case of high temperature crystallization. The measurement of current through the poly-Si oxide films shows that the conductivity of poly-Si oxide films depends on crystallization temperature of poly-Si films in the case of positive gate bias. When the gate is biased negatively, current through the poly-Si oxide films remained almost constant regardless of crystallization temperature. We find that poly-Si crystallized at lower temperatures offers poly-Si oxide films of lower leakage current in the case of electron injection from undoped poly-Si layers. The lower leakage current is due to highness of energy barrier for electron at undoped poly-Si/poly-Si oxide interface.

Synthesis and electrical characterization of Graphene Oxide films

2015 ◽  
Vol 590 ◽  
pp. 118-123 ◽  
Author(s):  
Muhammad Yasin ◽  
T. Tauqeer ◽  
Syed M.H. Zaidi ◽  
Sait E. San ◽  
Asad Mahmood ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Oxide Films ◽  
Electrical Characterization
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